IRF4905PBF vs IRF9Z34NPBF Comparison

Detailed side-by-side comparison of IRF4905PBF by Infineon and IRF9Z34NPBF by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Specification Comparison

Parameter IRF4905PBF IRF9Z34NPBF
Brand Infineon Infineon
Category MOSFETs MOSFETs
Lifecycle Status Active Active
Stock Status In Stock In Stock
Unit Price (USD) $0.95 $0.65
FET Type P-Channel β€”
Technology HEXFET (IR MOSFET) HEXFET (5th generation)
Drain-Source Voltage (VDS) -55 V β€”
Continuous Drain Current (ID) at TC -74 A β€”
Pulsed Drain Current (IDM) [DATA_NEEDED: pulsed drain current] β€”
Power Dissipation (PD) at TC 200 W β€”
On-Resistance RDS(on) max at VGS=-10V 20 mΞ© β€”
Gate-Source Voltage (VGS) max [DATA_NEEDED: VGS max] β€”
Gate Threshold Voltage (VGS(th)) [DATA_NEEDED: VGS(th) typ/range] β€”
Total Gate Charge (Qg) 120 nC β€”
Operating Temperature Range -55 Β°C to +175 Β°C (junction) -55C to +175C (junction)
Package TO-220AB (through-hole) TO-220AB (through-hole, 3-pin)
Pin Configuration Gate - Drain - Source (left to right) β€”
Mounting Type Through Hole Through Hole
Lead-Free / RoHS Yes (PBF suffix = lead-free, RoHS compliant) β€”
MSL Level 1 (not moisture-sensitive for TO-220) β€”
Manufacturer β€” Infineon Technologies (formerly International Rectifier)
Polarity / Channel Type β€” P-Channel
Drain-Source Voltage (Vds) β€” -55 V
Continuous Drain Current (Id) at Tc=25C β€” -19 A
Pulsed Drain Current (Idm) β€” -72 A
Power Dissipation (Pd) at Tc=25C β€” 68 W
On-Resistance Rds(on) at Vgs=-10V β€” 100 milliohm (typical)
Gate Threshold Voltage (Vgs(th)) β€” [DATA_NEEDED: Vgs(th) typical/min/max]
Gate Charge (Qg) β€” 23.3 nC (per Mouser listing)
Input Capacitance (Ciss) β€” [DATA_NEEDED: Ciss]
Pinout (G-D-S) β€” Pin 1 Gate, Pin 2 Drain (tab), Pin 3 Source
Lead-Free / Halogen-Free β€” Yes (PBF suffix)
RoHS Status β€” Compliant

Datasheets & Resources

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