IRF4905PBF vs IRLU024NPBF Comparison
Detailed side-by-side comparison of IRF4905PBF by Infineon and IRLU024NPBF by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Infineon
IRLU024NPBF
IRLU024NPBF - 55V 17A N-Channel HEXFET MOSFET | Infineon
IRLU024NPBF β ActiveSpecification Comparison
| Parameter | IRF4905PBF | IRLU024NPBF |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $0.95 | $0.61 |
| FET Type | P-Channel | N-Channel, Logic-Level |
| Technology | HEXFET (IR MOSFET) | HEXFET Power MOSFET (5th generation) |
| Drain-Source Voltage (VDS) | -55 V | β |
| Continuous Drain Current (ID) at TC | -74 A | β |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: pulsed drain current] | [DATA_NEEDED: IDM] |
| Power Dissipation (PD) at TC | 200 W | β |
| On-Resistance RDS(on) max at VGS=-10V | 20 mΞ© | β |
| Gate-Source Voltage (VGS) max | [DATA_NEEDED: VGS max] | β |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: VGS(th) typ/range] | β |
| Total Gate Charge (Qg) | 120 nC | 10 nC (typical, per listing) |
| Operating Temperature Range | -55 Β°C to +175 Β°C (junction) | β |
| Package | TO-220AB (through-hole) | IPAK (TO-251AA), Through Hole |
| Pin Configuration | Gate - Drain - Source (left to right) | β |
| Mounting Type | Through Hole | Through Hole |
| Lead-Free / RoHS | Yes (PBF suffix = lead-free, RoHS compliant) | Yes (PBF suffix indicates lead-free plating) |
| MSL Level | 1 (not moisture-sensitive for TO-220) | β |
| Manufacturer | β | Infineon Technologies (formerly International Rectifier) |
| Part Number | β | IRLU024NPBF |
| Drain-to-Source Voltage (VDS) | β | 55 V |
| Continuous Drain Current (ID) at TC=25C | β | 17 A |
| On-Resistance RDS(on) max at VGS=10V | β | 65 mOhm |
| On-Resistance RDS(on) max at VGS=5V | β | [DATA_NEEDED: RDS(on) at VGS=5V] |
| Gate Threshold Voltage VGS(th) | β | [DATA_NEEDED: VGS(th) min/typ/max] |
| Power Dissipation (PD) at TC=25C | β | 45 W |
| Thermal Resistance Junction-to-Case (RthJC) | β | 3.3 C/W |
| Thermal Resistance Junction-to-Ambient (RthJA) | β | 110 C/W (50 C/W PCB-mounted) |
| Operating Junction Temperature | β | -55C to +175C |
| Qualification | β | JEDEC standard |
| Gate Drive Voltage (optimized) | β | 10 V (capable of 4.5 V) |