IRF4905SPBF vs IPB120P04P4L03ATMA2 Comparison

Detailed side-by-side comparison of IRF4905SPBF by Infineon and IPB120P04P4L03ATMA2 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Infineon
IPB120P04P4L03ATMA2 IPB120P04P4L03ATMA2 - 40V P-Channel MOSFET, 120A, D2PAK | Infineon

IPB120P04P4L03ATMA2 - 40V P-Channel MOSFET, 120A, D2PAK | Infineon

IPB120P04P4L03ATMA2 βœ“ Active

Specification Comparison

Parameter IRF4905SPBF IPB120P04P4L03ATMA2
Brand Infineon Infineon
Category MOSFETs MOSFETs
Lifecycle Status Active Active
Stock Status In Stock In Stock
Unit Price (USD) $1.18 $1.74
Polarity P-Channel β€”
Drain-Source Voltage (VDS) -55 V 40 V
Continuous Drain Current (ID, Tc=25C) -42 A 120 A
Pulsed Drain Current (IDM) [DATA_NEEDED: pulsed drain current] β€”
On-Resistance (RDS(on) max) 20 mOhm @ VGS = -10V β€”
Gate-Source Voltage (VGS) max [DATA_NEEDED: VGS max, typical +/-20V] [DATA_NEEDED: VGS max]
Gate Threshold Voltage (VGS(th)) -2.0 V to -4.0 V [DATA_NEEDED: VGS(th) typ/range]
Power Dissipation (PD, Tc=25C) 170 W 136 W
Operating Junction Temperature -55 C to +150 C -55C to +175C
Thermal Resistance, Junction-to-Case (RthJC) [DATA_NEEDED: RthJC, typical 0.6 C/W] β€”
Package D2PAK (TO-263) surface mount PG-TO263-3-2 (D2PAK)
Mounting Type Surface Mount Surface Mount
Technology HEXFET, planar cell β€”
Total Gate Charge (Qg) 120 nC (typical per Mouser listing) β€”
Input Capacitance (Ciss) [DATA_NEEDED: Ciss] β€”
RoHS Status Compliant (PBF suffix indicates Pb-free) Compliant (per Infineon product page)
Qualification JEDEC standard β€”
Transistor Polarity β€” P-Channel
On-Resistance (RDS(on)) β€” 3.1 mΞ© (typ, per Infineon summary)
Technology Family β€” OptiMOS-P2
Configuration β€” Single P-Channel MOSFET
Pin Count β€” 3 (Gate, Drain, Source)
MSL Level β€” [DATA_NEEDED: MSL level]

Datasheets & Resources

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