IRF4905SPBF vs IRF4905STRRPBF Comparison
Detailed side-by-side comparison of IRF4905SPBF by Infineon and IRF4905STRRPBF by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Specification Comparison
| Parameter | IRF4905SPBF | IRF4905STRRPBF |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $1.18 | $0.94 |
| Polarity | P-Channel | P-Channel |
| Drain-Source Voltage (VDS) | -55 V | -55 V |
| Continuous Drain Current (ID, Tc=25C) | -42 A | β |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: pulsed drain current] | [DATA_NEEDED: pulsed drain current] |
| On-Resistance (RDS(on) max) | 20 mOhm @ VGS = -10V | β |
| Gate-Source Voltage (VGS) max | [DATA_NEEDED: VGS max, typical +/-20V] | Β±20 V |
| Gate Threshold Voltage (VGS(th)) | -2.0 V to -4.0 V | -2.0 V to -4.0 V |
| Power Dissipation (PD, Tc=25C) | 170 W | β |
| Operating Junction Temperature | -55 C to +150 C | -55 C to +175 C |
| Thermal Resistance, Junction-to-Case (RthJC) | [DATA_NEEDED: RthJC, typical 0.6 C/W] | β |
| Package | D2PAK (TO-263) surface mount | D2PAK (TO-263-3) |
| Mounting Type | Surface Mount | Surface Mount |
| Technology | HEXFET, planar cell | HEXFET (Advanced Process) |
| Total Gate Charge (Qg) | 120 nC (typical per Mouser listing) | 120 nC |
| Input Capacitance (Ciss) | [DATA_NEEDED: Ciss] | β |
| RoHS Status | Compliant (PBF suffix indicates Pb-free) | Compliant |
| Qualification | JEDEC standard | β |
| Continuous Drain Current (ID) at TC=25C | β | -74 A |
| Continuous Drain Current (ID) at TC=100C | β | [DATA_NEEDED: ID at TC=100C] |
| RDS(on) max at VGS=-10V | β | 20 mOhm |
| RDS(on) max at VGS=-4.5V | β | [DATA_NEEDED: RDS(on) at VGS=-4.5V] |
| Power Dissipation (PD) at TC=25C | β | 170 W |
| Lead-Free | β | Yes |