IRF4905SPBF vs IRF9530NPBF Comparison

Detailed side-by-side comparison of IRF4905SPBF by Infineon and IRF9530NPBF by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Specification Comparison

Parameter IRF4905SPBF IRF9530NPBF
Brand Infineon Infineon
Category MOSFETs MOSFETs
Lifecycle Status Active Active
Stock Status In Stock In Stock
Unit Price (USD) $1.18 $0.65
Polarity P-Channel P-Channel
Drain-Source Voltage (VDS) -55 V -100 V
Continuous Drain Current (ID, Tc=25C) -42 A β€”
Pulsed Drain Current (IDM) [DATA_NEEDED: pulsed drain current] [DATA_NEEDED: pulsed drain current]
On-Resistance (RDS(on) max) 20 mOhm @ VGS = -10V β€”
Gate-Source Voltage (VGS) max [DATA_NEEDED: VGS max, typical +/-20V] β€”
Gate Threshold Voltage (VGS(th)) -2.0 V to -4.0 V β€”
Power Dissipation (PD, Tc=25C) 170 W β€”
Operating Junction Temperature -55 C to +150 C -55Β°C to +175Β°C
Thermal Resistance, Junction-to-Case (RthJC) [DATA_NEEDED: RthJC, typical 0.6 C/W] β€”
Package D2PAK (TO-263) surface mount TO-220AB (through-hole)
Mounting Type Surface Mount Through Hole
Technology HEXFET, planar cell β€”
Total Gate Charge (Qg) 120 nC (typical per Mouser listing) β€”
Input Capacitance (Ciss) [DATA_NEEDED: Ciss] β€”
RoHS Status Compliant (PBF suffix indicates Pb-free) β€”
Qualification JEDEC standard β€”
Continuous Drain Current (ID) at TC=25Β°C β€” -14 A
On-Resistance RDS(on) max @ VGS=-10V β€” 200 mΞ©
Gate-Source Threshold Voltage VGS(th) typ β€” [DATA_NEEDED: VGS(th) typical value]
Total Gate Charge (Qg) typ β€” 38.7 nC
Maximum Power Dissition at TC=25Β°C β€” 79 W
Mounting Screw Torque (max) β€” [DATA_NEEDED: maximum torque]
Avalanche Rating β€” Repetitive avalanche rated
dv/dt Rating β€” Dynamic dV/dt rated
Lead-Free / RoHS Status β€” Lead-Free (PBF suffix), RoHS compliant

Datasheets & Resources

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