IRF4905STRLPBF vs IRF3710STRLPBF Comparison

Detailed side-by-side comparison of IRF4905STRLPBF by Infineon and IRF3710STRLPBF by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Specification Comparison

Parameter IRF4905STRLPBF IRF3710STRLPBF
Brand Infineon Infineon
Category MOSFETs MOSFETs
Lifecycle Status Active Active
Stock Status In Stock In Stock
Unit Price (USD) $0.95 $1.23
FET Type P-Channel N-Channel
Drain-Source Voltage (VDS) -55 V 100 V
Continuous Drain Current (ID) at Tc=25C -74 A β€”
Pulsed Drain Current (IDM) -260 A [DATA_NEEDED: pulsed drain current]
Gate-Source Voltage (VGS) max Β±20 V β€”
On-Resistance RDS(on) at VGS=-10V 20 mOhm β€”
Total Gate Charge (Qg) 120 nC 86.7 nC
Power Dissipation (PD) at Tc=25C 170 W β€”
Operating Temperature Range -55C to +175C -55 C to +175 C
Package D2PAK (TO-263) D2PAK (TO-263), surface mount
Mounting Type Surface Mount Surface Mount
Technology HEXFET (Planar) HEXFET / IR MOSFET (planar)
MSL Level 1 β€”
RoHS Status Compliant Compliant (Pb-free)
Lead-Free Yes Yes
Continuous Drain Current (ID, Tc=25 C) β€” 57 A
On-Resistance RDS(on) max β€” 23 mOhm
Gate-Source Voltage (VGS) β€” [DATA_NEEDED: VGS max]
Gate-Source Threshold Voltage (VGS(th)) β€” [DATA_NEEDED: VGS(th) typical]
Power Dissipation (PD, Tc=25 C) β€” 200 W
Tape & Reel Orientation β€” TRL (left)

Datasheets & Resources

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