IRF4905STRLPBF vs IRF4905SPBF Comparison

Detailed side-by-side comparison of IRF4905STRLPBF by Infineon and IRF4905SPBF by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Specification Comparison

Parameter IRF4905STRLPBF IRF4905SPBF
Brand Infineon Infineon
Category MOSFETs MOSFETs
Lifecycle Status Active Active
Stock Status In Stock In Stock
Unit Price (USD) $0.95 $1.18
FET Type P-Channel β€”
Drain-Source Voltage (VDS) -55 V -55 V
Continuous Drain Current (ID) at Tc=25C -74 A β€”
Pulsed Drain Current (IDM) -260 A [DATA_NEEDED: pulsed drain current]
Gate-Source Voltage (VGS) max Β±20 V [DATA_NEEDED: VGS max, typical +/-20V]
On-Resistance RDS(on) at VGS=-10V 20 mOhm β€”
Total Gate Charge (Qg) 120 nC 120 nC (typical per Mouser listing)
Power Dissipation (PD) at Tc=25C 170 W β€”
Operating Temperature Range -55C to +175C β€”
Package D2PAK (TO-263) D2PAK (TO-263) surface mount
Mounting Type Surface Mount Surface Mount
Technology HEXFET (Planar) HEXFET, planar cell
MSL Level 1 β€”
RoHS Status Compliant Compliant (PBF suffix indicates Pb-free)
Lead-Free Yes β€”
Polarity β€” P-Channel
Continuous Drain Current (ID, Tc=25C) β€” -42 A
On-Resistance (RDS(on) max) β€” 20 mOhm @ VGS = -10V
Gate Threshold Voltage (VGS(th)) β€” -2.0 V to -4.0 V
Power Dissipation (PD, Tc=25C) β€” 170 W
Operating Junction Temperature β€” -55 C to +150 C
Thermal Resistance, Junction-to-Case (RthJC) β€” [DATA_NEEDED: RthJC, typical 0.6 C/W]
Input Capacitance (Ciss) β€” [DATA_NEEDED: Ciss]
Qualification β€” JEDEC standard

Datasheets & Resources

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