IRF4905STRLPBF vs IRF4905STRRPBF Comparison
Detailed side-by-side comparison of IRF4905STRLPBF by Infineon and IRF4905STRRPBF by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Infineon
IRF4905STRLPBF - 55V P-Channel HEXFET MOSFET, 74A, D2PAK | Infineon
IRF4905STRLPBF β ActiveSpecification Comparison
| Parameter | IRF4905STRLPBF | IRF4905STRRPBF |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $0.95 | $0.94 |
| FET Type | P-Channel | β |
| Drain-Source Voltage (VDS) | -55 V | -55 V |
| Continuous Drain Current (ID) at Tc=25C | -74 A | β |
| Pulsed Drain Current (IDM) | -260 A | [DATA_NEEDED: pulsed drain current] |
| Gate-Source Voltage (VGS) max | Β±20 V | Β±20 V |
| On-Resistance RDS(on) at VGS=-10V | 20 mOhm | β |
| Total Gate Charge (Qg) | 120 nC | 120 nC |
| Power Dissipation (PD) at Tc=25C | 170 W | β |
| Operating Temperature Range | -55C to +175C | β |
| Package | D2PAK (TO-263) | D2PAK (TO-263-3) |
| Mounting Type | Surface Mount | Surface Mount |
| Technology | HEXFET (Planar) | HEXFET (Advanced Process) |
| MSL Level | 1 | β |
| RoHS Status | Compliant | Compliant |
| Lead-Free | Yes | Yes |
| Polarity | β | P-Channel |
| Continuous Drain Current (ID) at TC=25C | β | -74 A |
| Continuous Drain Current (ID) at TC=100C | β | [DATA_NEEDED: ID at TC=100C] |
| RDS(on) max at VGS=-10V | β | 20 mOhm |
| RDS(on) max at VGS=-4.5V | β | [DATA_NEEDED: RDS(on) at VGS=-4.5V] |
| Gate Threshold Voltage (VGS(th)) | β | -2.0 V to -4.0 V |
| Power Dissipation (PD) at TC=25C | β | 170 W |
| Operating Junction Temperature | β | -55 C to +175 C |