IRF4905STRRPBF vs BSC060P03NS3EGATMA1 Comparison
Detailed side-by-side comparison of IRF4905STRRPBF by Infineon and BSC060P03NS3EGATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Infineon
BSC060P03NS3EGATMA1
BSC060P03NS3EGATMA1 - 30V P-Ch MOSFET 6mΞ© 100A OptiMOS | Infineon
BSC060P03NS3EGATMA1 β ActiveSpecification Comparison
| Parameter | IRF4905STRRPBF | BSC060P03NS3EGATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $0.94 | $0.38 |
| Polarity | P-Channel | P-Channel |
| Drain-Source Voltage (VDS) | -55 V | -30 V |
| Continuous Drain Current (ID) at TC=25C | -74 A | β |
| Continuous Drain Current (ID) at TC=100C | [DATA_NEEDED: ID at TC=100C] | β |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: pulsed drain current] | β |
| Gate-Source Voltage (VGS) max | Β±20 V | β |
| RDS(on) max at VGS=-10V | 20 mOhm | β |
| RDS(on) max at VGS=-4.5V | [DATA_NEEDED: RDS(on) at VGS=-4.5V] | β |
| Gate Threshold Voltage (VGS(th)) | -2.0 V to -4.0 V | β |
| Total Gate Charge (Qg) | 120 nC | β |
| Power Dissipation (PD) at TC=25C | 170 W | β |
| Operating Junction Temperature | -55 C to +175 C | β |
| Package | D2PAK (TO-263-3) | PG-TDSON-8-1 (SuperSO8 5x6) |
| Mounting Type | Surface Mount | Surface Mount |
| Technology | HEXFET (Advanced Process) | OptiMOSβ’ P-channel Trench |
| RoHS Status | Compliant | Compliant |
| Lead-Free | Yes | β |
| Continuous Drain Current (Ta) | β | 17.7 A |
| Continuous Drain Current (Tc) | β | 100 A |
| On-State Resistance RDS(on) max @ VGS=10V | β | 6 mΞ© |
| Gate Threshold Voltage VGS(th) typ | β | -2.5 V |
| Total Gate Charge Qg @ VGS=10V | β | 81 nC |
| Input Capacitance Ciss | β | 6.02 nF |
| Output Capacitance Coss | β | 2.81 nF |
| Reverse Transfer Capacitance Crss | β | 220 pF |
| Power Dissipation (Ta) | β | 2.5 W |
| Power Dissipation (Tc) | β | 83 W |
| Operating Temperature Range | β | -55Β°C to +150Β°C |