IRF4905STRRPBF vs IRF4905SPBF Comparison
Detailed side-by-side comparison of IRF4905STRRPBF by Infineon and IRF4905SPBF by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Specification Comparison
| Parameter | IRF4905STRRPBF | IRF4905SPBF |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $0.94 | $1.18 |
| Polarity | P-Channel | P-Channel |
| Drain-Source Voltage (VDS) | -55 V | -55 V |
| Continuous Drain Current (ID) at TC=25C | -74 A | β |
| Continuous Drain Current (ID) at TC=100C | [DATA_NEEDED: ID at TC=100C] | β |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: pulsed drain current] | [DATA_NEEDED: pulsed drain current] |
| Gate-Source Voltage (VGS) max | Β±20 V | [DATA_NEEDED: VGS max, typical +/-20V] |
| RDS(on) max at VGS=-10V | 20 mOhm | β |
| RDS(on) max at VGS=-4.5V | [DATA_NEEDED: RDS(on) at VGS=-4.5V] | β |
| Gate Threshold Voltage (VGS(th)) | -2.0 V to -4.0 V | -2.0 V to -4.0 V |
| Total Gate Charge (Qg) | 120 nC | 120 nC (typical per Mouser listing) |
| Power Dissipation (PD) at TC=25C | 170 W | β |
| Operating Junction Temperature | -55 C to +175 C | -55 C to +150 C |
| Package | D2PAK (TO-263-3) | D2PAK (TO-263) surface mount |
| Mounting Type | Surface Mount | Surface Mount |
| Technology | HEXFET (Advanced Process) | HEXFET, planar cell |
| RoHS Status | Compliant | Compliant (PBF suffix indicates Pb-free) |
| Lead-Free | Yes | β |
| Continuous Drain Current (ID, Tc=25C) | β | -42 A |
| On-Resistance (RDS(on) max) | β | 20 mOhm @ VGS = -10V |
| Power Dissipation (PD, Tc=25C) | β | 170 W |
| Thermal Resistance, Junction-to-Case (RthJC) | β | [DATA_NEEDED: RthJC, typical 0.6 C/W] |
| Input Capacitance (Ciss) | β | [DATA_NEEDED: Ciss] |
| Qualification | β | JEDEC standard |