IRF4905STRRPBF vs IRF4905STRLPBF Comparison
Detailed side-by-side comparison of IRF4905STRRPBF by Infineon and IRF4905STRLPBF by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Infineon
IRF4905STRLPBF - 55V P-Channel HEXFET MOSFET, 74A, D2PAK | Infineon
IRF4905STRLPBF β ActiveSpecification Comparison
| Parameter | IRF4905STRRPBF | IRF4905STRLPBF |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $0.94 | $0.95 |
| Polarity | P-Channel | β |
| Drain-Source Voltage (VDS) | -55 V | -55 V |
| Continuous Drain Current (ID) at TC=25C | -74 A | β |
| Continuous Drain Current (ID) at TC=100C | [DATA_NEEDED: ID at TC=100C] | β |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: pulsed drain current] | -260 A |
| Gate-Source Voltage (VGS) max | Β±20 V | Β±20 V |
| RDS(on) max at VGS=-10V | 20 mOhm | β |
| RDS(on) max at VGS=-4.5V | [DATA_NEEDED: RDS(on) at VGS=-4.5V] | β |
| Gate Threshold Voltage (VGS(th)) | -2.0 V to -4.0 V | β |
| Total Gate Charge (Qg) | 120 nC | 120 nC |
| Power Dissipation (PD) at TC=25C | 170 W | β |
| Operating Junction Temperature | -55 C to +175 C | β |
| Package | D2PAK (TO-263-3) | D2PAK (TO-263) |
| Mounting Type | Surface Mount | Surface Mount |
| Technology | HEXFET (Advanced Process) | HEXFET (Planar) |
| RoHS Status | Compliant | Compliant |
| Lead-Free | Yes | Yes |
| FET Type | β | P-Channel |
| Continuous Drain Current (ID) at Tc=25C | β | -74 A |
| On-Resistance RDS(on) at VGS=-10V | β | 20 mOhm |
| Power Dissipation (PD) at Tc=25C | β | 170 W |
| Operating Temperature Range | β | -55C to +175C |
| MSL Level | β | 1 |