IRF4905STRRPBF vs IRF5305STRRPBF Comparison
Detailed side-by-side comparison of IRF4905STRRPBF by Infineon and IRF5305STRRPBF by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Specification Comparison
| Parameter | IRF4905STRRPBF | IRF5305STRRPBF |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $0.94 | $0.62 |
| Polarity | P-Channel | P-Channel |
| Drain-Source Voltage (VDS) | -55 V | β |
| Continuous Drain Current (ID) at TC=25C | -74 A | β |
| Continuous Drain Current (ID) at TC=100C | [DATA_NEEDED: ID at TC=100C] | β |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: pulsed drain current] | [DATA_NEEDED: pulsed drain current] |
| Gate-Source Voltage (VGS) max | Β±20 V | β |
| RDS(on) max at VGS=-10V | 20 mOhm | β |
| RDS(on) max at VGS=-4.5V | [DATA_NEEDED: RDS(on) at VGS=-4.5V] | β |
| Gate Threshold Voltage (VGS(th)) | -2.0 V to -4.0 V | [DATA_NEEDED: VGS(th) typical/min] |
| Total Gate Charge (Qg) | 120 nC | β |
| Power Dissipation (PD) at TC=25C | 170 W | β |
| Operating Junction Temperature | -55 C to +175 C | -55C to +175C |
| Package | D2PAK (TO-263-3) | D2PAK (TO-263) Surface Mount |
| Mounting Type | Surface Mount | Surface Mount |
| Technology | HEXFET (Advanced Process) | HEXFET (Advanced Process) |
| RoHS Status | Compliant | β |
| Lead-Free | Yes | β |
| Transistor Type | β | P-Channel MOSFET |
| Drain-to-Source Voltage (VDS) | β | -55 V |
| Continuous Drain Current (ID) at TC | β | -31 A |
| Gate-to-Source Voltage (VGS) max | β | Β±20 V |
| RDS(on) max @ VGS=-10V | β | 60 mOhm |
| Power Dissipation (TC) | β | 110 W |
| Power Dissipation (TA) | β | 3.8 W |
| Lead-Free / RoHS | β | Yes (Pb-free suffix) |
| Packaging | β | Tape & Reel (TR) |