IRF4905STRRPBF vs IRFR5305TRPBF Comparison
Detailed side-by-side comparison of IRF4905STRRPBF by Infineon and IRFR5305TRPBF by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Specification Comparison
| Parameter | IRF4905STRRPBF | IRFR5305TRPBF |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $0.94 | $0.32 |
| Polarity | P-Channel | P-Channel |
| Drain-Source Voltage (VDS) | -55 V | β |
| Continuous Drain Current (ID) at TC=25C | -74 A | 31 A |
| Continuous Drain Current (ID) at TC=100C | [DATA_NEEDED: ID at TC=100C] | [DATA_NEEDED: ID at TC=100C] |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: pulsed drain current] | β |
| Gate-Source Voltage (VGS) max | Β±20 V | β |
| RDS(on) max at VGS=-10V | 20 mOhm | β |
| RDS(on) max at VGS=-4.5V | [DATA_NEEDED: RDS(on) at VGS=-4.5V] | β |
| Gate Threshold Voltage (VGS(th)) | -2.0 V to -4.0 V | β |
| Total Gate Charge (Qg) | 120 nC | β |
| Power Dissipation (PD) at TC=25C | 170 W | 110 W |
| Operating Junction Temperature | -55 C to +175 C | β |
| Package | D2PAK (TO-263-3) | TO-252AA (DPAK) |
| Mounting Type | Surface Mount | Surface Mount |
| Technology | HEXFET (Advanced Process) | HEXFET (IR MOSFET) |
| RoHS Status | Compliant | Compliant (Pb-free PBF suffix) |
| Lead-Free | Yes | β |
| Drain-Source Voltage (VDS) Max | β | -55 V |
| On-Resistance (RDS(on)) Max at VGS=-10V | β | 65 mOhm |
| Gate-Source Threshold Voltage (VGS(th)) | β | -2 V to -4 V |
| Gate Charge (Qg) Typ | β | [DATA_NEEDED: Qg typ] |
| Single-Pulse Avalanche Energy (EAS) | β | 270 mJ |
| Operating Temperature Range | β | -55 C to +175 C |
| MSL Level | β | 1 |
| Lead-Free Finish | β | Yes (PBF suffix) |