IRF5210PBF vs IRF4905PBF Comparison
Detailed side-by-side comparison of IRF5210PBF by Infineon and IRF4905PBF by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Specification Comparison
| Parameter | IRF5210PBF | IRF4905PBF |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $2.52 | $0.95 |
| Transistor Type | P-Channel MOSFET | β |
| Drain-Source Voltage (Vds) | -100 V | β |
| Continuous Drain Current (Id) at Tc | -40 A | β |
| Pulsed Drain Current (Idm) | [DATA_NEEDED: pulsed drain current value] | β |
| Gate-Source Threshold Voltage (Vgs(th)) | -2 V to -4 V (typical -2 V) | β |
| On-Resistance Rds(on) at Vgs=-10V | 60 milliohms | β |
| Total Gate Charge (Qg) | 120 nC | 120 nC |
| Power Dissipation (Pd) at Tc | 200 W | β |
| Operating Temperature Range | -55 C to +175 C (junction) | -55 Β°C to +175 Β°C (junction) |
| Package | TO-220AB (through-hole) | TO-220AB (through-hole) |
| Mounting Type | Through Hole | Through Hole |
| Technology | HEXFET (Fifth Generation) | HEXFET (IR MOSFET) |
| Lead-Free / RoHS | Yes (PBF suffix = lead-free) | Yes (PBF suffix = lead-free, RoHS compliant) |
| Tab Connection | Electrically tied to Drain | β |
| Pin Configuration | Gate / Drain (tab) / Source (G-D-S, front view) | Gate - Drain - Source (left to right) |
| FET Type | β | P-Channel |
| Drain-Source Voltage (VDS) | β | -55 V |
| Continuous Drain Current (ID) at TC | β | -74 A |
| Pulsed Drain Current (IDM) | β | [DATA_NEEDED: pulsed drain current] |
| Power Dissipation (PD) at TC | β | 200 W |
| On-Resistance RDS(on) max at VGS=-10V | β | 20 mΞ© |
| Gate-Source Voltage (VGS) max | β | [DATA_NEEDED: VGS max] |
| Gate Threshold Voltage (VGS(th)) | β | [DATA_NEEDED: VGS(th) typ/range] |
| MSL Level | β | 1 (not moisture-sensitive for TO-220) |