IRF5210PBF vs IRF520NPBF Comparison
Detailed side-by-side comparison of IRF5210PBF by Infineon and IRF520NPBF by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Specification Comparison
| Parameter | IRF5210PBF | IRF520NPBF |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $2.52 | $0.66 |
| Transistor Type | P-Channel MOSFET | β |
| Drain-Source Voltage (Vds) | -100 V | β |
| Continuous Drain Current (Id) at Tc | -40 A | β |
| Pulsed Drain Current (Idm) | [DATA_NEEDED: pulsed drain current value] | β |
| Gate-Source Threshold Voltage (Vgs(th)) | -2 V to -4 V (typical -2 V) | β |
| On-Resistance Rds(on) at Vgs=-10V | 60 milliohms | β |
| Total Gate Charge (Qg) | 120 nC | β |
| Power Dissipation (Pd) at Tc | 200 W | β |
| Operating Temperature Range | -55 C to +175 C (junction) | -55C to +175C |
| Package | TO-220AB (through-hole) | TO-220AB (through-hole) |
| Mounting Type | Through Hole | Through Hole |
| Technology | HEXFET (Fifth Generation) | HEXFET (vertical DMOS) |
| Lead-Free / RoHS | Yes (PBF suffix = lead-free) | β |
| Tab Connection | Electrically tied to Drain | β |
| Pin Configuration | Gate / Drain (tab) / Source (G-D-S, front view) | β |
| Manufacturer | β | Infineon Technologies |
| Series | β | HEXFET |
| FET Type | β | N-Channel |
| Drain-to-Source Voltage (V_DSS) | β | 100 V |
| Continuous Drain Current (I_D) at Tc | β | 9.7 A |
| Pulsed Drain Current (I_DM) | β | [DATA_NEEDED: pulsed drain current value] |
| Gate-to-Source Voltage (V_GS) max | β | Β±20 V |
| R_DS(on) max at V_GS=10V | β | 200 mOhm |
| Total Gate Charge (Q_g) | β | 16.7 nC |
| Power Dissipation (P_D) at Tc | β | 48 W |
| MSL Level | β | 1 (unlimited) |
| RoHS Status | β | Compliant (Pb-free) |
| Lead-Free Finish | β | Yes (PBF suffix) |