IRF5210PBF vs IRFS7530TRLPBF Comparison

Detailed side-by-side comparison of IRF5210PBF by Infineon and IRFS7530TRLPBF by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Specification Comparison

Parameter IRF5210PBF IRFS7530TRLPBF
Brand Infineon Infineon
Category MOSFETs MOSFETs
Lifecycle Status Active Active
Stock Status In Stock In Stock
Unit Price (USD) $2.52 $1.72
Transistor Type P-Channel MOSFET
Drain-Source Voltage (Vds) -100 V
Continuous Drain Current (Id) at Tc -40 A
Pulsed Drain Current (Idm) [DATA_NEEDED: pulsed drain current value]
Gate-Source Threshold Voltage (Vgs(th)) -2 V to -4 V (typical -2 V)
On-Resistance Rds(on) at Vgs=-10V 60 milliohms
Total Gate Charge (Qg) 120 nC
Power Dissipation (Pd) at Tc 200 W
Operating Temperature Range -55 C to +175 C (junction) -55 °C to +175 °C (Tj)
Package TO-220AB (through-hole)
Mounting Type Through Hole Surface Mount
Technology HEXFET (Fifth Generation) StrongIRFET™ (N-Channel Trench MOSFET)
Lead-Free / RoHS Yes (PBF suffix = lead-free) Yes (PBF suffix)
Tab Connection Electrically tied to Drain
Pin Configuration Gate / Drain (tab) / Source (G-D-S, front view) 3-Pin (Gate, Drain tab, Source)
Manufacturer Infineon Technologies
Part Number IRFS7530TRLPBF
Drain-Source Voltage (VDS) Max 60 V
Continuous Drain Current (ID) at Tc=25°C 195 A
Pulsed Drain Current (IDM) [DATA_NEEDED: pulsed drain current]
On-Resistance RDS(on) Max @ VGS=10V 2 mΩ
Gate Threshold Voltage VGS(th) [DATA_NEEDED: gate threshold voltage]
Gate Charge Qg Typ [DATA_NEEDED: typical gate charge]
Total Power Dissipation (PD) at Tc=25°C 375 W
Package / Case PG-TO263-2 (D2PAK, TO-263)
Packaging Tape & Reel (TR)
Series StrongIRFET™

Datasheets & Resources

Browse All Products Create BOM Request Quote