IRF5210PBF vs IRFZ44NPBF Comparison

Detailed side-by-side comparison of IRF5210PBF by Infineon and IRFZ44NPBF by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Specification Comparison

Parameter IRF5210PBF IRFZ44NPBF
Brand Infineon Infineon
Category MOSFETs MOSFETs
Lifecycle Status Active Active
Stock Status In Stock In Stock
Unit Price (USD) $2.52 $0.65
Transistor Type P-Channel MOSFET β€”
Drain-Source Voltage (Vds) -100 V β€”
Continuous Drain Current (Id) at Tc -40 A β€”
Pulsed Drain Current (Idm) [DATA_NEEDED: pulsed drain current value] β€”
Gate-Source Threshold Voltage (Vgs(th)) -2 V to -4 V (typical -2 V) β€”
On-Resistance Rds(on) at Vgs=-10V 60 milliohms β€”
Total Gate Charge (Qg) 120 nC 42 nC
Power Dissipation (Pd) at Tc 200 W β€”
Operating Temperature Range -55 C to +175 C (junction) β€”
Package TO-220AB (through-hole) TO-220AB (3-pin + tab)
Mounting Type Through Hole Through Hole
Technology HEXFET (Fifth Generation) HEXFET (Advanced Process)
Lead-Free / RoHS Yes (PBF suffix = lead-free) β€”
Tab Connection Electrically tied to Drain β€”
Pin Configuration Gate / Drain (tab) / Source (G-D-S, front view) β€”
FET Type β€” N-Channel
Drain-to-Source Voltage (VDS) β€” 55 V
Continuous Drain Current (ID) at Tc=25C β€” 49 A
Continuous Drain Current (ID) at Tc=100C β€” [DATA_NEEDED: ID at Tc=100C]
Pulsed Drain Current (IDM) β€” [DATA_NEEDED: pulsed drain current]
Gate-to-Source Voltage (VGS) max β€” +/- 20 V
Static Drain-Source On-Resistance (RDS(on)) at VGS=10V β€” 17.5 mOhm
Power Dissipation (PD) at Tc=25C β€” 94 W
Thermal Resistance Junction-to-Case (RthJC) β€” 1.0 C/W
Thermal Resistance Junction-to-Ambient (RthJA) β€” 62 C/W
Operating Junction Temperature β€” -55C to +175C
Avalanche Energy Rating (EAS) β€” [DATA_NEEDED: EAS rating]
RoHS Status β€” Compliant

Datasheets & Resources

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