IRF5305PBF vs IRF4905PBF Comparison
Detailed side-by-side comparison of IRF5305PBF by Infineon and IRF4905PBF by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Specification Comparison
| Parameter | IRF5305PBF | IRF4905PBF |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $0.51 | $0.95 |
| FET Type | P-Channel | P-Channel |
| Drain-to-Source Voltage (VDS) | -55 V | β |
| Continuous Drain Current (ID) at TC=25C | -31 A | β |
| Continuous Drain Current (ID) at TC=100C | [DATA_NEEDED: ID at TC=100C] | β |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: pulsed drain current] | [DATA_NEEDED: pulsed drain current] |
| Maximum Power Dissition (PD) at TC=25C | 110 W | β |
| Gate-to-Source Voltage (VGS) max | Β±20 V | β |
| Static Drain-to-Source On-Resistance (RDS(on)) at VGS=-10V | 60 mOhm (typical) | β |
| Static Drain-to-Source On-Resistance (RDS(on)) at VGS=-10V ID=-16A | [DATA_NEEDED: max RDS(on) at -10V] | β |
| Total Gate Charge (Qg) | 42 nC (typical) | 120 nC |
| Gate-to-Drain Charge (Qgd) | [DATA_NEEDED: Qgd] | β |
| Input Capacitance (Ciss) | [DATA_NEEDED: Ciss] | β |
| Output Capacitance (Coss) | [DATA_NEEDED: Coss] | β |
| Turn-On Delay Time (td(on)) | [DATA_NEEDED: td(on)] | β |
| Turn-Off Delay Time (td(off)) | [DATA_NEEDED: td(off)] | β |
| Thermal Resistance, Junction-to-Case (RthJC) | [DATA_NEEDED: RthJC] | β |
| Thermal Resistance, Junction-to-Ambient (RthJA) | [DATA_NEEDED: RthJA] | β |
| Operating Junction Temperature | -55C to +175C | β |
| Package | TO-220AB (through-hole, 3-pin + tab) | TO-220AB (through-hole) |
| Mounting Type | Through Hole | Through Hole |
| Lead-Free Plating (PBF suffix) | Yes (Pb-free) | β |
| RoHS Status | Compliant | β |
| Technology | HEXFET (planar DMOS) | HEXFET (IR MOSFET) |
| Drain-Source Voltage (VDS) | β | -55 V |
| Continuous Drain Current (ID) at TC | β | -74 A |
| Power Dissipation (PD) at TC | β | 200 W |
| On-Resistance RDS(on) max at VGS=-10V | β | 20 mΞ© |
| Gate-Source Voltage (VGS) max | β | [DATA_NEEDED: VGS max] |
| Gate Threshold Voltage (VGS(th)) | β | [DATA_NEEDED: VGS(th) typ/range] |
| Operating Temperature Range | β | -55 Β°C to +175 Β°C (junction) |
| Pin Configuration | β | Gate - Drain - Source (left to right) |
| Lead-Free / RoHS | β | Yes (PBF suffix = lead-free, RoHS compliant) |
| MSL Level | β | 1 (not moisture-sensitive for TO-220) |