IRF5305PBF vs IRF9540NSTRLPBF Comparison
Detailed side-by-side comparison of IRF5305PBF by Infineon and IRF9540NSTRLPBF by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Specification Comparison
| Parameter | IRF5305PBF | IRF9540NSTRLPBF |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $0.51 | $0.58 |
| FET Type | P-Channel | β |
| Drain-to-Source Voltage (VDS) | -55 V | β |
| Continuous Drain Current (ID) at TC=25C | -31 A | β |
| Continuous Drain Current (ID) at TC=100C | [DATA_NEEDED: ID at TC=100C] | β |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: pulsed drain current] | β |
| Maximum Power Dissition (PD) at TC=25C | 110 W | β |
| Gate-to-Source Voltage (VGS) max | Β±20 V | β |
| Static Drain-to-Source On-Resistance (RDS(on)) at VGS=-10V | 60 mOhm (typical) | β |
| Static Drain-to-Source On-Resistance (RDS(on)) at VGS=-10V ID=-16A | [DATA_NEEDED: max RDS(on) at -10V] | β |
| Total Gate Charge (Qg) | 42 nC (typical) | 64.7 nC |
| Gate-to-Drain Charge (Qgd) | [DATA_NEEDED: Qgd] | β |
| Input Capacitance (Ciss) | [DATA_NEEDED: Ciss] | β |
| Output Capacitance (Coss) | [DATA_NEEDED: Coss] | β |
| Turn-On Delay Time (td(on)) | [DATA_NEEDED: td(on)] | β |
| Turn-Off Delay Time (td(off)) | [DATA_NEEDED: td(off)] | β |
| Thermal Resistance, Junction-to-Case (RthJC) | [DATA_NEEDED: RthJC] | β |
| Thermal Resistance, Junction-to-Ambient (RthJA) | [DATA_NEEDED: RthJA] | β |
| Operating Junction Temperature | -55C to +175C | β |
| Package | TO-220AB (through-hole, 3-pin + tab) | D2PAK (TO-263), surface mount |
| Mounting Type | Through Hole | Surface Mount |
| Lead-Free Plating (PBF suffix) | Yes (Pb-free) | β |
| RoHS Status | Compliant | β |
| Technology | HEXFET (planar DMOS) | HEXFET, Advanced Process |
| Manufacturer | β | Infineon (formerly International Rectifier) |
| Product Type | β | Single P-Channel Power MOSFET (HEXFET) |
| Drain-Source Voltage (Vdss) | β | -100 V |
| Continuous Drain Current (Id) | β | -23 A (at Tc) |
| On-Resistance (Rds(on)) | β | 117 mOhm max |
| Power Dissipation (Ta) | β | 3.1 W |
| Power Dissipation (Tc) | β | 110 W |
| Polarity | β | P-Channel |
| Operating Mode | β | Enhancement-mode |
| Avalanche Rated | β | Yes |
| Lead Finish | β | Pb-free, RoHS-compliant |
| Shipping Media | β | Tape and Reel (TR suffix) |