IRF5305PBF vs IRFR5305TRPBF Comparison
Detailed side-by-side comparison of IRF5305PBF by Infineon and IRFR5305TRPBF by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Specification Comparison
| Parameter | IRF5305PBF | IRFR5305TRPBF |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $0.51 | $0.32 |
| FET Type | P-Channel | β |
| Drain-to-Source Voltage (VDS) | -55 V | β |
| Continuous Drain Current (ID) at TC=25C | -31 A | 31 A |
| Continuous Drain Current (ID) at TC=100C | [DATA_NEEDED: ID at TC=100C] | [DATA_NEEDED: ID at TC=100C] |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: pulsed drain current] | β |
| Maximum Power Dissition (PD) at TC=25C | 110 W | β |
| Gate-to-Source Voltage (VGS) max | Β±20 V | β |
| Static Drain-to-Source On-Resistance (RDS(on)) at VGS=-10V | 60 mOhm (typical) | β |
| Static Drain-to-Source On-Resistance (RDS(on)) at VGS=-10V ID=-16A | [DATA_NEEDED: max RDS(on) at -10V] | β |
| Total Gate Charge (Qg) | 42 nC (typical) | β |
| Gate-to-Drain Charge (Qgd) | [DATA_NEEDED: Qgd] | β |
| Input Capacitance (Ciss) | [DATA_NEEDED: Ciss] | β |
| Output Capacitance (Coss) | [DATA_NEEDED: Coss] | β |
| Turn-On Delay Time (td(on)) | [DATA_NEEDED: td(on)] | β |
| Turn-Off Delay Time (td(off)) | [DATA_NEEDED: td(off)] | β |
| Thermal Resistance, Junction-to-Case (RthJC) | [DATA_NEEDED: RthJC] | β |
| Thermal Resistance, Junction-to-Ambient (RthJA) | [DATA_NEEDED: RthJA] | β |
| Operating Junction Temperature | -55C to +175C | β |
| Package | TO-220AB (through-hole, 3-pin + tab) | TO-252AA (DPAK) |
| Mounting Type | Through Hole | Surface Mount |
| Lead-Free Plating (PBF suffix) | Yes (Pb-free) | β |
| RoHS Status | Compliant | Compliant (Pb-free PBF suffix) |
| Technology | HEXFET (planar DMOS) | HEXFET (IR MOSFET) |
| Polarity | β | P-Channel |
| Drain-Source Voltage (VDS) Max | β | -55 V |
| On-Resistance (RDS(on)) Max at VGS=-10V | β | 65 mOhm |
| Gate-Source Threshold Voltage (VGS(th)) | β | -2 V to -4 V |
| Gate Charge (Qg) Typ | β | [DATA_NEEDED: Qg typ] |
| Power Dissipation (PD) at TC=25C | β | 110 W |
| Single-Pulse Avalanche Energy (EAS) | β | 270 mJ |
| Operating Temperature Range | β | -55 C to +175 C |
| MSL Level | β | 1 |
| Lead-Free Finish | β | Yes (PBF suffix) |