IRF5305PBF vs IRFU5305PBF Comparison
Detailed side-by-side comparison of IRF5305PBF by Infineon and IRFU5305PBF by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Specification Comparison
| Parameter | IRF5305PBF | IRFU5305PBF |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $0.51 | $0.68 |
| FET Type | P-Channel | β |
| Drain-to-Source Voltage (VDS) | -55 V | β |
| Continuous Drain Current (ID) at TC=25C | -31 A | β |
| Continuous Drain Current (ID) at TC=100C | [DATA_NEEDED: ID at TC=100C] | β |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: pulsed drain current] | -110 A (pulsed) |
| Maximum Power Dissition (PD) at TC=25C | 110 W | β |
| Gate-to-Source Voltage (VGS) max | Β±20 V | β |
| Static Drain-to-Source On-Resistance (RDS(on)) at VGS=-10V | 60 mOhm (typical) | β |
| Static Drain-to-Source On-Resistance (RDS(on)) at VGS=-10V ID=-16A | [DATA_NEEDED: max RDS(on) at -10V] | β |
| Total Gate Charge (Qg) | 42 nC (typical) | 42 nC (typical) |
| Gate-to-Drain Charge (Qgd) | [DATA_NEEDED: Qgd] | β |
| Input Capacitance (Ciss) | [DATA_NEEDED: Ciss] | β |
| Output Capacitance (Coss) | [DATA_NEEDED: Coss] | β |
| Turn-On Delay Time (td(on)) | [DATA_NEEDED: td(on)] | β |
| Turn-Off Delay Time (td(off)) | [DATA_NEEDED: td(off)] | β |
| Thermal Resistance, Junction-to-Case (RthJC) | [DATA_NEEDED: RthJC] | β |
| Thermal Resistance, Junction-to-Ambient (RthJA) | [DATA_NEEDED: RthJA] | β |
| Operating Junction Temperature | -55C to +175C | -55 Β°C to +175 Β°C |
| Package | TO-220AB (through-hole, 3-pin + tab) | IPAK (TO-251AA) Through-Hole, 3 pins |
| Mounting Type | Through Hole | Through Hole |
| Lead-Free Plating (PBF suffix) | Yes (Pb-free) | β |
| RoHS Status | Compliant | β |
| Technology | HEXFET (planar DMOS) | β |
| Polarity | β | P-Channel |
| Drain-Source Voltage (VDS) | β | -55 V |
| Continuous Drain Current (ID) at Tc | β | -31 A |
| On-Resistance RDS(on) max @ VGS=-10V | β | 65 mΞ© |
| Gate-Source Voltage (VGS) max | β | Β±20 V |
| Power Dissipation (PD) at Tc=25Β°C | β | 110 W |
| Thermal Resistance Junction-to-Case (RΞΈJC) | β | 1.36 Β°C/W |
| Thermal Resistance Junction-to-Ambient (RΞΈJA) | β | 62 Β°C/W |
| Avalanche Rated | β | Yes (EAS rated) |
| RoHS Compliance | β | Compliant |