IRF5305STRLPBF vs IRF5305PBF Comparison

Detailed side-by-side comparison of IRF5305STRLPBF by Infineon and IRF5305PBF by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Infineon
IRF5305STRLPBF IRF5305STRLPBF - 55V P-Ch MOSFET 31A 60mΞ© | Infineon

IRF5305STRLPBF - 55V P-Ch MOSFET 31A 60mΞ© | Infineon

IRF5305STRLPBF βœ“ Active

Specification Comparison

Parameter IRF5305STRLPBF IRF5305PBF
Brand Infineon Infineon
Category MOSFETs MOSFETs
Lifecycle Status Active Active
Stock Status In Stock In Stock
Unit Price (USD) $0.92 $0.51
Polarity / Channel Type P-Channel β€”
Drain-Source Voltage (VDS) -55 V β€”
Continuous Drain Current (ID) at TC=25C -31 A -31 A
Continuous Drain Current (ID) at TA=25C [DATA_NEEDED: ID at TA=25C] β€”
RDS(on) max at VGS=-10V 60 mOhm β€”
RDS(on) max at VGS=-4.5V [DATA_NEEDED: RDS(on) at VGS=-4.5V] β€”
Gate Threshold Voltage VGS(th) typ [DATA_NEEDED: VGS(th) typ] β€”
Total Gate Charge (Qg) 42 nC (Mouser listing) / 63 nC (Future Electronics listing) 42 nC (typical)
Maximum Power Dissition at Tc 110 W β€”
Maximum Power Dissipation at TA 3.8 W β€”
Package TO-263 / D2PAK (surface mount) TO-220AB (through-hole, 3-pin + tab)
Mounting Type Surface Mount Through Hole
Operating Temperature Range [DATA_NEEDED: Tj max / operating range] β€”
Technology HEXFET (fifth generation), IR MOSFET HEXFET (planar DMOS)
Packaging Tape & Reel (TR), 800 pcs per reel β€”
Lead-Free / RoHS Yes (Pb-free suffix PBF) β€”
FET Type β€” P-Channel
Drain-to-Source Voltage (VDS) β€” -55 V
Continuous Drain Current (ID) at TC=100C β€” [DATA_NEEDED: ID at TC=100C]
Pulsed Drain Current (IDM) β€” [DATA_NEEDED: pulsed drain current]
Maximum Power Dissition (PD) at TC=25C β€” 110 W
Gate-to-Source Voltage (VGS) max β€” Β±20 V
Static Drain-to-Source On-Resistance (RDS(on)) at VGS=-10V β€” 60 mOhm (typical)
Static Drain-to-Source On-Resistance (RDS(on)) at VGS=-10V ID=-16A β€” [DATA_NEEDED: max RDS(on) at -10V]
Gate-to-Drain Charge (Qgd) β€” [DATA_NEEDED: Qgd]
Input Capacitance (Ciss) β€” [DATA_NEEDED: Ciss]
Output Capacitance (Coss) β€” [DATA_NEEDED: Coss]
Turn-On Delay Time (td(on)) β€” [DATA_NEEDED: td(on)]
Turn-Off Delay Time (td(off)) β€” [DATA_NEEDED: td(off)]
Thermal Resistance, Junction-to-Case (RthJC) β€” [DATA_NEEDED: RthJC]
Thermal Resistance, Junction-to-Ambient (RthJA) β€” [DATA_NEEDED: RthJA]
Operating Junction Temperature β€” -55C to +175C
Lead-Free Plating (PBF suffix) β€” Yes (Pb-free)
RoHS Status β€” Compliant

Datasheets & Resources

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