IRF5305STRRPBF vs IRF5305STRLPBF Comparison

Detailed side-by-side comparison of IRF5305STRRPBF by Infineon and IRF5305STRLPBF by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Infineon
IRF5305STRRPBF IRF5305STRRPBF - P-CH 55V 31A HEXFET MOSFET D2PAK | Infineon

IRF5305STRRPBF - P-CH 55V 31A HEXFET MOSFET D2PAK | Infineon

IRF5305STRRPBF βœ“ Active
Infineon
IRF5305STRLPBF IRF5305STRLPBF - 55V P-Ch MOSFET 31A 60mΞ© | Infineon

IRF5305STRLPBF - 55V P-Ch MOSFET 31A 60mΞ© | Infineon

IRF5305STRLPBF βœ“ Active

Specification Comparison

Parameter IRF5305STRRPBF IRF5305STRLPBF
Brand Infineon Infineon
Category MOSFETs MOSFETs
Lifecycle Status Active Active
Stock Status In Stock In Stock
Unit Price (USD) $0.62 $0.92
Transistor Type P-Channel MOSFET β€”
Technology HEXFET (Advanced Process) HEXFET (fifth generation), IR MOSFET
Drain-to-Source Voltage (VDS) -55 V β€”
Continuous Drain Current (ID) at TC -31 A β€”
Pulsed Drain Current (IDM) [DATA_NEEDED: pulsed drain current] β€”
Gate-to-Source Voltage (VGS) max Β±20 V β€”
RDS(on) max @ VGS=-10V 60 mOhm β€”
Gate Threshold Voltage (VGS(th)) [DATA_NEEDED: VGS(th) typical/min] β€”
Power Dissipation (TC) 110 W β€”
Power Dissipation (TA) 3.8 W β€”
Operating Junction Temperature -55C to +175C β€”
Package D2PAK (TO-263) Surface Mount TO-263 / D2PAK (surface mount)
Mounting Type Surface Mount Surface Mount
Lead-Free / RoHS Yes (Pb-free suffix) Yes (Pb-free suffix PBF)
Packaging Tape & Reel (TR) Tape & Reel (TR), 800 pcs per reel
Polarity P-Channel β€”
Polarity / Channel Type β€” P-Channel
Drain-Source Voltage (VDS) β€” -55 V
Continuous Drain Current (ID) at TC=25C β€” -31 A
Continuous Drain Current (ID) at TA=25C β€” [DATA_NEEDED: ID at TA=25C]
RDS(on) max at VGS=-10V β€” 60 mOhm
RDS(on) max at VGS=-4.5V β€” [DATA_NEEDED: RDS(on) at VGS=-4.5V]
Gate Threshold Voltage VGS(th) typ β€” [DATA_NEEDED: VGS(th) typ]
Total Gate Charge (Qg) β€” 42 nC (Mouser listing) / 63 nC (Future Electronics listing)
Maximum Power Dissition at Tc β€” 110 W
Maximum Power Dissipation at TA β€” 3.8 W
Operating Temperature Range β€” [DATA_NEEDED: Tj max / operating range]

Datasheets & Resources

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