IRF530NPBF vs IRF520NPBF Comparison

Detailed side-by-side comparison of IRF530NPBF by Infineon and IRF520NPBF by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Specification Comparison

Parameter IRF530NPBF IRF520NPBF
Brand Infineon Infineon
Category MOSFETs MOSFETs
Lifecycle Status Active Active
Stock Status In Stock In Stock
Unit Price (USD) $0.38 $0.66
Part Number IRF530NPBF β€”
Manufacturer Infineon Technologies (formerly International Rectifier) Infineon Technologies
Transistor Type N-Channel HEXFET Power MOSFET β€”
Drain-Source Voltage (VDS) 100 V β€”
Continuous Drain Current (ID) at Tc 17 A β€”
Pulsed Drain Current (IDM) 60 A β€”
Static Drain-Source On-Resistance (RDS(on)) at VGS=10V 90 mOhm (max, approximate per datasheet) β€”
Gate-Source Voltage (VGS) max Β±20 V β€”
Gate Threshold Voltage (VGS(th)) 2.0 V to 4.0 V β€”
Maximum Power Dissition (Pd) at Tc 70 W β€”
Operating Junction Temperature -55 C to +175 C β€”
Package / Case TO-220AB (through-hole) β€”
Mounting Type Through Hole Through Hole
Avalanche Rated Yes β€”
RoHS Status Compliant Compliant (Pb-free)
MSL Level N/A (through-hole) 1 (unlimited)
Configuration Single N-channel, 3 pins (Gate, Drain, Source) β€”
Series β€” HEXFET
FET Type β€” N-Channel
Drain-to-Source Voltage (V_DSS) β€” 100 V
Continuous Drain Current (I_D) at Tc β€” 9.7 A
Pulsed Drain Current (I_DM) β€” [DATA_NEEDED: pulsed drain current value]
Gate-to-Source Voltage (V_GS) max β€” Β±20 V
R_DS(on) max at V_GS=10V β€” 200 mOhm
Total Gate Charge (Q_g) β€” 16.7 nC
Power Dissipation (P_D) at Tc β€” 48 W
Operating Temperature Range β€” -55C to +175C
Package β€” TO-220AB (through-hole)
Lead-Free Finish β€” Yes (PBF suffix)
Technology β€” HEXFET (vertical DMOS)

Datasheets & Resources

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