IRF540NSTRLPBF vs IRF2907ZSTRLPBF Comparison

Detailed side-by-side comparison of IRF540NSTRLPBF by Infineon and IRF2907ZSTRLPBF by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Infineon
IRF540NSTRLPBF IRF540NSTRLPBF - 100V 33A N-Channel MOSFET D2PAK | Infineon

IRF540NSTRLPBF - 100V 33A N-Channel MOSFET D2PAK | Infineon

IRF540NSTRLPBF βœ“ Active

Specification Comparison

Parameter IRF540NSTRLPBF IRF2907ZSTRLPBF
Brand Infineon Infineon
Category MOSFETs MOSFETs
Lifecycle Status Active Active
Stock Status In Stock In Stock
Unit Price (USD) $0.74 $1.55
Transistor Type N-Channel MOSFET β€”
Technology HEXFET (IR MOSFET) IR HEXFET / IR MOSFET
Drain-Source Voltage (Vdss) 100 V β€”
Continuous Drain Current (Id) at Tc=25C 33 A β€”
Pulsed Drain Current (Idm) 110 A (per datasheet pulse curve) β€”
On-Resistance Rds(on) max at Vgs=10V 44 mOhm β€”
Gate Threshold Voltage Vgs(th) 2.0 V to 4.0 V β€”
Total Gate Charge Qg 47.3 nC (typical) β€”
Power Dissipation (Pd) at Tc=25C 130 W β€”
Operating Temperature Range -55 C to +175 C β€”
Package D2PAK (TO-263), surface mount D2PAK (TO-263AB) surface mount
Mounting Type Surface Mount Surface Mount (SMD)
Packaging Tape & Reel (13-inch reel) Tape and Reel (left orientation)
RoHS Status Compliant (Pb-free) Compliant
Avalanche Energy Rated Yes (HEXFET ruggedized) β€”
Transistor Polarity β€” N-Channel
Drain-Source Voltage V(BR)DSS β€” 75 V
Continuous Drain Current (TC = 25 C) β€” 170 A
Continuous Drain Current (TC = 100 C) β€” [DATA_NEEDED: ID at TC=100C]
RDS(on) max at VGS = 10 V β€” 4.5 mOhm
RDS(on) typical at VGS = 10 V β€” 3.5 mOhm
Gate Threshold Voltage VGS(th) β€” 2.0 V to 4.0 V
Maximum Power Dissipation (TC = 25 C) β€” 300 W
Operating Junction Temperature β€” -55 C to +175 C
Pin Count β€” 3 (Gate, Drain, Source)
Lead-Free β€” Yes (PBF suffix)
Avalanche Rating β€” Repetitive avalanche allowed up to TJ(max)

Datasheets & Resources

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