IRF540NSTRLPBF vs IRFZ44NSTRLPBF Comparison

Detailed side-by-side comparison of IRF540NSTRLPBF by Infineon and IRFZ44NSTRLPBF by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Infineon
IRF540NSTRLPBF IRF540NSTRLPBF - 100V 33A N-Channel MOSFET D2PAK | Infineon

IRF540NSTRLPBF - 100V 33A N-Channel MOSFET D2PAK | Infineon

IRF540NSTRLPBF βœ“ Active

Specification Comparison

Parameter IRF540NSTRLPBF IRFZ44NSTRLPBF
Brand Infineon Infineon
Category MOSFETs MOSFETs
Lifecycle Status Active Active
Stock Status In Stock In Stock
Unit Price (USD) $0.74 $0.93
Transistor Type N-Channel MOSFET β€”
Technology HEXFET (IR MOSFET) HEXFET
Drain-Source Voltage (Vdss) 100 V β€”
Continuous Drain Current (Id) at Tc=25C 33 A β€”
Pulsed Drain Current (Idm) 110 A (per datasheet pulse curve) β€”
On-Resistance Rds(on) max at Vgs=10V 44 mOhm β€”
Gate Threshold Voltage Vgs(th) 2.0 V to 4.0 V β€”
Total Gate Charge Qg 47.3 nC (typical) β€”
Power Dissipation (Pd) at Tc=25C 130 W β€”
Operating Temperature Range -55 C to +175 C -55C to +175C
Package D2PAK (TO-263), surface mount D2PAK (TO-263)
Mounting Type Surface Mount Surface Mount
Packaging Tape & Reel (13-inch reel) β€”
RoHS Status Compliant (Pb-free) Compliant
Avalanche Energy Rated Yes (HEXFET ruggedized) β€”
Polarity β€” N-Channel
MOSFET Operating Mode β€” Enhancement
Drain-Source Voltage (VDS) β€” 55 V
Continuous Drain Current (ID) at TC β€” 49 A
Pulsed Drain Current (IDM) β€” [DATA_NEEDED: pulsed drain current]
Gate-Source Voltage (VGS) max β€” Β±20 V
Gate Threshold Voltage (VGS(th)) β€” [DATA_NEEDED: gate threshold voltage]
Drain-Source On-Resistance RDS(on) max β€” 17.5 mOhm at VGS=10V
Total Gate Charge (Qg) β€” 42 nC
Power Dissipation (TC) β€” 94 W
Power Dissipation (TA) β€” 3.8 W
Lead-Free (PBF suffix) β€” Yes

Datasheets & Resources

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