IRF540ZPBF vs IRF3710ZPBF Comparison
Detailed side-by-side comparison of IRF540ZPBF by Infineon and IRF3710ZPBF by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Specification Comparison
| Parameter | IRF540ZPBF | IRF3710ZPBF |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $0.62 | $0.88 |
| Manufacturer | Infineon Technologies (formerly International Rectifier) | β |
| Part Number | IRF540ZPBF | β |
| Technology | HEXFET Power MOSFET (N-Channel DMOS) | HEXFET (Advanced Process) |
| Drain-Source Voltage (V_DS) | 100 V | β |
| Continuous Drain Current (I_D) at T_C=25C | 36 A | β |
| Pulsed Drain Current (I_DM) | [DATA_NEEDED: pulsed drain current] | β |
| Gate-Source Voltage (V_GS) max | [DATA_NEEDED: V_GS maximum rating] | β |
| Gate Threshold Voltage (V_GS(th)) | [DATA_NEEDED: V_GS(th) typical] | β |
| On-Resistance R_DS(on) max at V_GS=10V | 26.5 mOhm | β |
| Total Gate Charge (Q_g) | 42 nC | β |
| Power Dissipation (P_D) at T_C=25C | 92 W | β |
| Maximum Junction Temperature | 175 C | β |
| Operating Junction Temperature Range | -55 C to +175 C | β |
| Package | TO-220AB (through-hole, 3-lead) | TO-220AB (through-hole, 3 pins) |
| Mounting Type | Through Hole | Through Hole |
| Pin Count | 3 (Gate, Drain, Source) | β |
| RoHS Status | Compliant | Compliant (PBF suffix) |
| Lead-Free | Yes | Yes |
| Automotive Qualified | Yes (per datasheet description) | β |
| Transistor Type | β | N-Channel MOSFET |
| Drain-Source Voltage (Vdss) | β | 100 V |
| Continuous Drain Current (Id) at Tc=25C | β | 59 A |
| Pulsed Drain Current (Idm) | β | [DATA_NEEDED: pulsed drain current] |
| Maximum Power Dissipation (Pd) at Tc=25C | β | 160 W |
| On-Resistance RDS(on) at VGS=10V | β | 18 mOhm (typical) |
| Gate Threshold Voltage VGS(th) | β | [DATA_NEEDED: gate threshold voltage] |
| Total Gate Charge (Qg) | β | 82 nC (typical) |
| Maximum Junction Operating Temperature | β | 175 C |
| Gate Drive Voltage (Optimized) | β | 10 V |
| Pin Configuration | β | G-D-S (Gate-Drain-Source, standard TO-220) |
| Qualification Standard | β | JEDEC, Normal Level |