IRF540ZPBF vs IRFB4110PBF Comparison
Detailed side-by-side comparison of IRF540ZPBF by Infineon and IRFB4110PBF by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Specification Comparison
| Parameter | IRF540ZPBF | IRFB4110PBF |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $0.62 | $1.55 |
| Manufacturer | Infineon Technologies (formerly International Rectifier) | β |
| Part Number | IRF540ZPBF | β |
| Technology | HEXFET Power MOSFET (N-Channel DMOS) | HEXFET (planar DMOS) |
| Drain-Source Voltage (V_DS) | 100 V | β |
| Continuous Drain Current (I_D) at T_C=25C | 36 A | β |
| Pulsed Drain Current (I_DM) | [DATA_NEEDED: pulsed drain current] | β |
| Gate-Source Voltage (V_GS) max | [DATA_NEEDED: V_GS maximum rating] | β |
| Gate Threshold Voltage (V_GS(th)) | [DATA_NEEDED: V_GS(th) typical] | β |
| On-Resistance R_DS(on) max at V_GS=10V | 26.5 mOhm | β |
| Total Gate Charge (Q_g) | 42 nC | β |
| Power Dissipation (P_D) at T_C=25C | 92 W | β |
| Maximum Junction Temperature | 175 C | β |
| Operating Junction Temperature Range | -55 C to +175 C | β |
| Package | TO-220AB (through-hole, 3-lead) | TO-220AB (through-hole) |
| Mounting Type | Through Hole | Through Hole |
| Pin Count | 3 (Gate, Drain, Source) | β |
| RoHS Status | Compliant | Compliant (Pb-free suffix) |
| Lead-Free | Yes | Yes (PBF suffix denotes Pb-free) |
| Automotive Qualified | Yes (per datasheet description) | β |
| Transistor Type | β | N-Channel MOSFET |
| Drain-Source Voltage (VDS) | β | 100 V |
| Continuous Drain Current (ID) at TC=25Β°C | β | 120 A (bond-wire limited) |
| Pulsed Drain Current (IDM) | β | [DATA_NEEDED: pulsed drain current] |
| Gate-Source Voltage (VGS) max | β | Β±20 V |
| Gate Threshold Voltage (VGS(th)) | β | [DATA_NEEDED: VGS(th) typical/min/max] |
| On-Resistance RDS(on) max at VGS=10V | β | 4.5 mΞ© |
| On-Resistance RDS(on) typ at VGS=10V | β | 3.7 mΞ© |
| Power Dissipation (PD) at TC=25Β°C | β | 370 W |
| Operating Junction Temperature | β | -55 Β°C to +175 Β°C |