IRF7103TRPBF vs IRF7854TRPBF Comparison
Detailed side-by-side comparison of IRF7103TRPBF by Infineon and IRF7854TRPBF by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Specification Comparison
| Parameter | IRF7103TRPBF | IRF7854TRPBF |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $0.47 | $0.48 |
| Manufacturer | Infineon Technologies (formerly International Rectifier) | β |
| Part Number | IRF7103TRPBF | β |
| FET Type | Dual N-Channel | N-Channel |
| Configuration | Common Source, Dual Die | β |
| Drain-to-Source Voltage (VDS) | 50 V | β |
| Continuous Drain Current (ID) | 3 A | β |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: IDM value] | β |
| On-Resistance RDS(on) max | 130 mOhm @ VGS=10V | β |
| On-Resistance RDS(on) typ | 0.11 ohm | β |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: VGS(th) value] | β |
| Total Power Dissipation (PD) | 2 W | β |
| Operating Temperature Range | -55C to +150C (TJ) | -55Β°C to +150Β°C (TJ) |
| Package | SO-8 (PG-DSO-8-902) | SO-8 |
| Mounting Type | Surface Mount | Surface Mount |
| Technology | IR MOSFETβ’ (HEXFET equivalent) | HEXFET (planar N-channel) |
| Soldering Method | Vapour phase, infrared, wave soldering | β |
| MSL Level | 1 | β |
| Lead-Free | Yes (Pb-free per TRPBF suffix) | β |
| RoHS Status | Compliant | β |
| Drain-Source Voltage (VDS) | β | 80 V |
| Continuous Drain Current (ID) at Ta=25Β°C | β | 10 A |
| Power Dissipation (PD) at Ta=25Β°C | β | 2.5 W |
| On-Resistance RDS(on) max at VGS=10V | β | 13.4 mΞ© |
| Gate-Source Threshold Voltage VGS(th) max | β | 4.9 V |
| Total Gate Charge Qg | β | 27 nC |
| Lead-Free / RoHS | β | Yes (PBF suffix, lead-free) |
| Qualification | β | JEDEC industrial, Normal level |
| Solder Process | β | Reflow and wave-solderable |
| Gate Drive Voltage (recommended) | β | 10 V |