IRF7105PBF vs IRF7105TRPBF Comparison

Detailed side-by-side comparison of IRF7105PBF by Infineon and IRF7105TRPBF by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Specification Comparison

Parameter IRF7105PBF IRF7105TRPBF
Brand Infineon Infineon
Category MOSFETs MOSFETs
Lifecycle Status Active Active
Stock Status In Stock In Stock
Unit Price (USD) $0.61 $0.30
Manufacturer Infineon Technologies (formerly International Rectifier) Infineon Technologies
Part Number IRF7105PBF β€”
FET Type N-Channel and P-Channel (Dual, Complementary) β€”
Technology HEXFET (Fifth Generation) HEXFET (IR MOSFET, fifth generation)
N-Channel VDS (Drain-Source Voltage) 25 V β€”
P-Channel VDS (Drain-Source Voltage) 25 V β€”
N-Channel Continuous Drain Current (ID) 3.5 A β€”
P-Channel Continuous Drain Current (ID) 2.3 A β€”
Total Package Power Dissipation (PD) 2 W β€”
Package / Case 8-SOIC (SO-8) β€”
Mounting Type Surface Mount Surface Mount
Pin Count 8 8
Lead-Free / Halogen-Free Yes / Yes β€”
RoHS Compliance Compliant β€”
MSL (Moisture Sensitivity Level) MSL1 β€”
Qualification Industrial β€”
Soldering Compatibility Vapor Phase, Infrared, Wave β€”
dv/dt Rating Dynamic (rated per datasheet) β€”
Part Series β€” IRF7105 (HEXFET Fifth Generation)
Polarity / Configuration β€” N-Channel + P-Channel, dual MOSFET in one package
Drain-to-Source Voltage (Vds) β€” 25 V
Continuous Drain Current - N-channel (Id, N-ch) β€” 3.5 A
Continuous Drain Current - P-channel (Id, P-ch) β€” 2.3 A
Rds(on) Maximum β€” 100 mOhm
Package β€” 8-SO (SOIC-8)
Total Package Power Dissipation (Pd) β€” 2 W
Operating Temperature Range β€” [DATA_NEEDED: junction temperature range]
Gate Threshold Voltage (Vgs(th)) β€” [DATA_NEEDED: typical Vgs(th)]
Packaging Form β€” Tape & Reel (TR)
Lead-Free / RoHS Status β€” Pb-free (PBF suffix), RoHS compliant

Datasheets & Resources

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