IRF7105PBF vs IRF7351TRPBF Comparison

Detailed side-by-side comparison of IRF7105PBF by Infineon and IRF7351TRPBF by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Specification Comparison

Parameter IRF7105PBF IRF7351TRPBF
Brand Infineon Infineon
Category MOSFETs MOSFETs
Lifecycle Status Active Active
Stock Status In Stock In Stock
Unit Price (USD) $0.61 $0.68
Manufacturer Infineon Technologies (formerly International Rectifier) Infineon Technologies (formerly International Rectifier)
Part Number IRF7105PBF IRF7351TRPBF
FET Type N-Channel and P-Channel (Dual, Complementary) β€”
Technology HEXFET (Fifth Generation) IR MOSFET (HEXFET trench)
N-Channel VDS (Drain-Source Voltage) 25 V β€”
P-Channel VDS (Drain-Source Voltage) 25 V β€”
N-Channel Continuous Drain Current (ID) 3.5 A β€”
P-Channel Continuous Drain Current (ID) 2.3 A β€”
Total Package Power Dissipation (PD) 2 W β€”
Package / Case 8-SOIC (SO-8) β€”
Mounting Type Surface Mount Surface Mount
Pin Count 8 β€”
Lead-Free / Halogen-Free Yes / Yes β€”
RoHS Compliance Compliant β€”
MSL (Moisture Sensitivity Level) MSL1 β€”
Qualification Industrial β€”
Soldering Compatibility Vapor Phase, Infrared, Wave β€”
dv/dt Rating Dynamic (rated per datasheet) β€”
Configuration β€” Dual N-Channel MOSFET (Half-Bridge)
Drain-Source Voltage (VDS) β€” 60 V
Continuous Drain Current (ID) β€” 8 A
On-Resistance RDS(on) max β€” 17.8 mOhm
On-Resistance RDS(on) typ (per digchips) β€” 0.0137 ohm (13.7 mOhm)
Total Gate Charge (Qg) β€” 24 nC
Power Dissipation (PD) β€” 2 W
Package β€” 8-SO (SO-8 / SOIC-8) Surface Mount
Operating Temperature β€” -55C to +150C (junction)
Typical Application β€” Synchronous Rectifier for Isolated DC-DC Converters
RoHS Status β€” Compliant (PBF suffix = lead-free)
Lead-Free β€” Yes
MSL Level β€” [DATA_NEEDED: MSL Level]
Gate Threshold Voltage (VGS(th)) β€” [DATA_NEEDED: VGS(th) typical/min]

Datasheets & Resources

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