IRF7105TRPBF vs IRF7105PBF Comparison

Detailed side-by-side comparison of IRF7105TRPBF by Infineon and IRF7105PBF by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Specification Comparison

Parameter IRF7105TRPBF IRF7105PBF
Brand Infineon Infineon
Category MOSFETs MOSFETs
Lifecycle Status Active Active
Stock Status In Stock In Stock
Unit Price (USD) $0.30 $0.61
Manufacturer Infineon Technologies Infineon Technologies (formerly International Rectifier)
Part Series IRF7105 (HEXFET Fifth Generation) β€”
Polarity / Configuration N-Channel + P-Channel, dual MOSFET in one package β€”
Drain-to-Source Voltage (Vds) 25 V β€”
Continuous Drain Current - N-channel (Id, N-ch) 3.5 A β€”
Continuous Drain Current - P-channel (Id, P-ch) 2.3 A β€”
Rds(on) Maximum 100 mOhm β€”
Technology HEXFET (IR MOSFET, fifth generation) HEXFET (Fifth Generation)
Package 8-SO (SOIC-8) β€”
Total Package Power Dissipation (Pd) 2 W β€”
Mounting Type Surface Mount Surface Mount
Operating Temperature Range [DATA_NEEDED: junction temperature range] β€”
Gate Threshold Voltage (Vgs(th)) [DATA_NEEDED: typical Vgs(th)] β€”
Packaging Form Tape & Reel (TR) β€”
Lead-Free / RoHS Status Pb-free (PBF suffix), RoHS compliant β€”
Pin Count 8 8
Part Number β€” IRF7105PBF
FET Type β€” N-Channel and P-Channel (Dual, Complementary)
N-Channel VDS (Drain-Source Voltage) β€” 25 V
P-Channel VDS (Drain-Source Voltage) β€” 25 V
N-Channel Continuous Drain Current (ID) β€” 3.5 A
P-Channel Continuous Drain Current (ID) β€” 2.3 A
Total Package Power Dissipation (PD) β€” 2 W
Package / Case β€” 8-SOIC (SO-8)
Lead-Free / Halogen-Free β€” Yes / Yes
RoHS Compliance β€” Compliant
MSL (Moisture Sensitivity Level) β€” MSL1
Qualification β€” Industrial
Soldering Compatibility β€” Vapor Phase, Infrared, Wave
dv/dt Rating β€” Dynamic (rated per datasheet)

Datasheets & Resources

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