IRF7105TRPBF vs IRF7341GTRPBF Comparison

Detailed side-by-side comparison of IRF7105TRPBF by Infineon and IRF7341GTRPBF by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Specification Comparison

Parameter IRF7105TRPBF IRF7341GTRPBF
Brand Infineon Infineon
Category MOSFETs MOSFETs
Lifecycle Status Active Active
Stock Status In Stock In Stock
Unit Price (USD) $0.30 $0.76
Manufacturer Infineon Technologies β€”
Part Series IRF7105 (HEXFET Fifth Generation) β€”
Polarity / Configuration N-Channel + P-Channel, dual MOSFET in one package β€”
Drain-to-Source Voltage (Vds) 25 V β€”
Continuous Drain Current - N-channel (Id, N-ch) 3.5 A β€”
Continuous Drain Current - P-channel (Id, P-ch) 2.3 A β€”
Rds(on) Maximum 100 mOhm β€”
Technology HEXFET (IR MOSFET, fifth generation) IR HEXFET Planar MOSFET
Package 8-SO (SOIC-8) 8-SO (SOIC-8)
Total Package Power Dissipation (Pd) 2 W β€”
Mounting Type Surface Mount Surface Mount
Operating Temperature Range [DATA_NEEDED: junction temperature range] -55 C to +175 C
Gate Threshold Voltage (Vgs(th)) [DATA_NEEDED: typical Vgs(th)] β€”
Packaging Form Tape & Reel (TR) β€”
Lead-Free / RoHS Status Pb-free (PBF suffix), RoHS compliant β€”
Pin Count 8 β€”
Drain-Source Voltage (VDS) β€” 55 V
Continuous Drain Current (ID) β€” 5.1 A
On-Resistance (RDS(on)) max β€” 50 mOhm at VGS=10V
Power Dissipation (PD) β€” 2.4 W
Maximum Junction Temperature β€” 175 C
Configuration β€” Dual N-Channel
Gate Threshold Voltage (VGS(th)) β€” [DATA_NEEDED: typical VGS(th) value]
Input Capacitance (Ciss) β€” [DATA_NEEDED: Ciss typical]
Output Capacitance (Coss) β€” [DATA_NEEDED: Coss typical]
Total Gate Charge (Qg) β€” [DATA_NEEDED: Qg typical]
RoHS Status β€” Compliant
Lead-Free β€” Yes (PBF suffix)

Datasheets & Resources

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