IRF7205PBF vs IRF9Z34NPBF Comparison

Detailed side-by-side comparison of IRF7205PBF by Infineon and IRF9Z34NPBF by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Specification Comparison

Parameter IRF7205PBF IRF9Z34NPBF
Brand Infineon Infineon
Category MOSFETs MOSFETs
Lifecycle Status Active Active
Stock Status In Stock In Stock
Unit Price (USD) $0.47 $0.65
Polarity P-Channel β€”
Drain-Source Voltage (VDS) -30 V β€”
Continuous Drain Current (ID) -4.6 A β€”
On-Resistance RDS(on) max at VGS=-10V 70 mOhm β€”
On-Resistance RDS(on) max at VGS=-4.5V [DATA_NEEDED: RDS(on) at VGS=-4.5V] β€”
Gate Threshold Voltage VGS(th) -1 V to -3 V (typical) β€”
Gate Charge Qg [DATA_NEEDED: total gate charge] β€”
Technology IR MOSFET (HEXFET, planar cell) HEXFET (5th generation)
Package SO-8 TO-220AB (through-hole, 3-pin)
Mounting Type Surface Mount Through Hole
Operating Temperature Range -55 C to +150 C (junction) -55C to +175C (junction)
Power Dissipation (TA=25C) [DATA_NEEDED: Pd at TA=25C] β€”
Switching Frequency Optimization Below 100 kHz β€”
Qualification JEDEC standard β€”
RoHS Status Compliant (Pb-free per PBF suffix) Compliant
Generation Fourth Generation HEXFET β€”
Manufacturer β€” Infineon Technologies (formerly International Rectifier)
Polarity / Channel Type β€” P-Channel
Drain-Source Voltage (Vds) β€” -55 V
Continuous Drain Current (Id) at Tc=25C β€” -19 A
Pulsed Drain Current (Idm) β€” -72 A
Power Dissipation (Pd) at Tc=25C β€” 68 W
On-Resistance Rds(on) at Vgs=-10V β€” 100 milliohm (typical)
Gate Threshold Voltage (Vgs(th)) β€” [DATA_NEEDED: Vgs(th) typical/min/max]
Gate Charge (Qg) β€” 23.3 nC (per Mouser listing)
Input Capacitance (Ciss) β€” [DATA_NEEDED: Ciss]
Pinout (G-D-S) β€” Pin 1 Gate, Pin 2 Drain (tab), Pin 3 Source
Lead-Free / Halogen-Free β€” Yes (PBF suffix)

Datasheets & Resources

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