IRF7309TRPBF vs IRF7313TRPBF Comparison

Detailed side-by-side comparison of IRF7309TRPBF by Infineon and IRF7313TRPBF by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Specification Comparison

Parameter IRF7309TRPBF IRF7313TRPBF
Brand Infineon Infineon
Category MOSFETs MOSFETs
Lifecycle Status Active Active
Stock Status In Stock In Stock
Unit Price (USD) $0.35 $0.27
Configuration Dual N-Channel + P-Channel (Complementary) β€”
Polarity N+P β€”
Drain-Source Voltage (VDS) 30 V β€”
Continuous Drain Current (N-channel, TA=25C) 4 A β€”
Continuous Drain Current (P-channel, TA=25C) 3 A β€”
On-Resistance (N-channel, max) 50 mOhm β€”
On-Resistance (P-channel, max) [DATA_NEEDED: RDS(on) P-channel value] β€”
Power Dissipation (TA=25C) 1.4 W β€”
Technology IR HEXFET Generation V IR MOSFET Generation V (HEXFET Fifth Generation)
Gate Threshold Voltage (VGS(th)) [DATA_NEEDED: typical VGS(th) value] 1.0 V to 2.5 V (typical range)
Operating Temperature Range -55C to +150C (TJ) -55C to +150C (junction)
Package 8-SO (SOIC-8) 8-pin SOIC (SO-8) surface mount
Mounting Type Surface Mount Surface Mount
MSL Level MSL-1 (unlimited floor life per JEDEC J-STD-020) 1
Lead-Free Status Yes (TRPBF suffix = Pb-free) β€”
RoHS Status Compliant β€”
Packaging Tape & Reel β€”
Manufacturer β€” Infineon (formerly International Rectifier)
Part Number β€” IRF7313TRPBF
Transistor Configuration β€” Dual N-Channel (Independent)
Drain-Source Voltage (VDS) max β€” 30 V
Continuous Drain Current (ID) max β€” 6.5 A per channel
On-Resistance (RDS(on)) max β€” 29 mOhm at VGS=10V
Power Dissipation (PD) max β€” 2 W
Gate-Source Voltage (VGS) max β€” [DATA_NEEDED: Β±V rating]
Lead-Free / Pbf β€” Yes (lead-free plating)
Avalanche Rated β€” Yes
Qualification Standard β€” Consumer market (per IR datasheet)
Shipping Media β€” Tape & Reel (TRPBF suffix)

Datasheets & Resources

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