IRF7309TRPBF vs IRF7832TRPBF Comparison

Detailed side-by-side comparison of IRF7309TRPBF by Infineon and IRF7832TRPBF by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Specification Comparison

Parameter IRF7309TRPBF IRF7832TRPBF
Brand Infineon Infineon
Category MOSFETs MOSFETs
Lifecycle Status Active Active
Stock Status In Stock In Stock
Unit Price (USD) $0.35 $0.92
Configuration Dual N-Channel + P-Channel (Complementary) β€”
Polarity N+P β€”
Drain-Source Voltage (VDS) 30 V 30 V
Continuous Drain Current (N-channel, TA=25C) 4 A β€”
Continuous Drain Current (P-channel, TA=25C) 3 A β€”
On-Resistance (N-channel, max) 50 mOhm β€”
On-Resistance (P-channel, max) [DATA_NEEDED: RDS(on) P-channel value] β€”
Power Dissipation (TA=25C) 1.4 W β€”
Technology IR HEXFET Generation V HEXFET (trench MOSFET)
Gate Threshold Voltage (VGS(th)) [DATA_NEEDED: typical VGS(th) value] β€”
Operating Temperature Range -55C to +150C (TJ) -55 C to +150 C (TJ)
Package 8-SO (SOIC-8) 8-SO (SOIC-8)
Mounting Type Surface Mount Surface Mount
MSL Level MSL-1 (unlimited floor life per JEDEC J-STD-020) 1 (per JEDEC J-STD-020)
Lead-Free Status Yes (TRPBF suffix = Pb-free) β€”
RoHS Status Compliant Compliant
Packaging Tape & Reel β€”
Manufacturer β€” Infineon Technologies (formerly International Rectifier)
Part Number β€” IRF7832TRPBF
FET Type β€” N-Channel
Continuous Drain Current (ID) at TA=25C β€” 20 A
Pulsed Drain Current (IDM) β€” [DATA_NEEDED: pulsed drain current]
On-Resistance RDS(on) max at VGS=10V β€” 4.0 mOhm
Gate-Source Voltage (VGS) max β€” +/- 20 V
Gate Threshold Voltage (VGS(th)) typical β€” 1.0 V to 2.5 V
Total Gate Charge (Qg) typical β€” 34 nC
Power Dissipation (PD) at TA=25C β€” 2.5 W
Lead-Free β€” Yes

Datasheets & Resources

Browse All Products Create BOM Request Quote