IRF7313TRPBF vs IRF7907TRPBF Comparison

Detailed side-by-side comparison of IRF7313TRPBF by Infineon and IRF7907TRPBF by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Specification Comparison

Parameter IRF7313TRPBF IRF7907TRPBF
Brand Infineon Infineon
Category MOSFETs MOSFETs
Lifecycle Status Active Active
Stock Status In Stock In Stock
Unit Price (USD) $0.27 $0.43
Manufacturer Infineon (formerly International Rectifier) β€”
Part Number IRF7313TRPBF β€”
Technology IR MOSFET Generation V (HEXFET Fifth Generation) IR MOSFET (Infineon hexfet-style trench)
Transistor Configuration Dual N-Channel (Independent) β€”
Drain-Source Voltage (VDS) max 30 V β€”
Continuous Drain Current (ID) max 6.5 A per channel β€”
On-Resistance (RDS(on)) max 29 mOhm at VGS=10V β€”
Power Dissipation (PD) max 2 W β€”
Gate-Source Voltage (VGS) max [DATA_NEEDED: Β±V rating] β€”
Gate Threshold Voltage (VGS(th)) 1.0 V to 2.5 V (typical range) β€”
Operating Temperature Range -55C to +150C (junction) -55 C to +150 C
Package 8-pin SOIC (SO-8) surface mount 8-SOIC (SO-8)
Mounting Type Surface Mount Surface Mount
Lead-Free / Pbf Yes (lead-free plating) β€”
Avalanche Rated Yes β€”
MSL Level 1 β€”
Qualification Standard Consumer market (per IR datasheet) β€”
Shipping Media Tape & Reel (TRPBF suffix) β€”
Configuration β€” Dual N-Channel MOSFET Array
Drain-Source Voltage (VDS) Max β€” 30 V
Continuous Drain Current (ID) Max β€” 9.1 A per channel at 25 C
Pulsed Drain Current (IDM) Max β€” 11 A
On-Resistance (RDS(on)) Max β€” 11.8 mOhm at VGS = 10 V
Gate-Source Threshold Voltage (VGS(th)) β€” 1.35 V (typ)
Total Power Dissipation (PD) Max β€” 2 W
Lead-Free Status β€” Yes (PBF suffix)
Packaging β€” Tape & Reel (TR)
RoHS Status β€” Compliant
Channel Polarity β€” N-Channel (both)

Datasheets & Resources

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