IRF7341GTRPBF vs IRF7389PBF Comparison

Detailed side-by-side comparison of IRF7341GTRPBF by Infineon and IRF7389PBF by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Specification Comparison

Parameter IRF7341GTRPBF IRF7389PBF
Brand Infineon Infineon
Category MOSFETs MOSFETs
Lifecycle Status Active Active
Stock Status In Stock In Stock
Unit Price (USD) $0.76 $0.61
Drain-Source Voltage (VDS) 55 V β€”
Continuous Drain Current (ID) 5.1 A β€”
On-Resistance (RDS(on)) max 50 mOhm at VGS=10V β€”
Power Dissipation (PD) 2.4 W β€”
Maximum Junction Temperature 175 C β€”
Configuration Dual N-Channel N and P-Channel (complementary half-bridge)
Technology IR HEXFET Planar MOSFET Generation V HEXFET
Package 8-SO (SOIC-8) SO-8 (SOIC-8) surface mount
Mounting Type Surface Mount Surface Mount
Gate Threshold Voltage (VGS(th)) [DATA_NEEDED: typical VGS(th) value] β€”
Input Capacitance (Ciss) [DATA_NEEDED: Ciss typical] β€”
Output Capacitance (Coss) [DATA_NEEDED: Coss typical] β€”
Total Gate Charge (Qg) [DATA_NEEDED: Qg typical] β€”
Operating Temperature Range -55 C to +175 C [DATA_NEEDED: full operating temperature range]
RoHS Status Compliant Compliant
Lead-Free Yes (PBF suffix) Yes
Drain-to-Source Voltage N-Ch (V_DSS) β€” 30 V
Drain-to-Source Voltage P-Ch (V_DSS) β€” -30 V
Continuous Drain Current N-Ch (I_D) β€” 7.3 A
Continuous Drain Current P-Ch (I_D) β€” -5.3 A
On-Resistance N-Ch R_DS(on) max β€” 0.029 ohm at V_GS=10V
On-Resistance P-Ch R_DS(on) max β€” 0.058 ohm at V_GS=10V
Total Gate Charge N-Ch (Q_g) typical β€” 22 nC
Total Gate Charge P-Ch (Q_g) typical β€” 23 nC
Power Dissipation (P_D) β€” 2.5 W
Pinout β€” Industry-standard complementary SO-8
Halogen-Free β€” Yes
Avalanche Rated β€” Yes (fully avalanche rated)

Datasheets & Resources

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