IRF7341GTRPBF vs ISA150233C03LMDSXTMA1 Comparison

Detailed side-by-side comparison of IRF7341GTRPBF by Infineon and ISA150233C03LMDSXTMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Infineon
ISA150233C03LMDSXTMA1 ISA150233C03LMDSXTMA1 - 30V OptiMOS 3 Dual N+P MOSFET | Infineon

ISA150233C03LMDSXTMA1 - 30V OptiMOS 3 Dual N+P MOSFET | Infineon

ISA150233C03LMDSXTMA1 βœ“ Active

Specification Comparison

Parameter IRF7341GTRPBF ISA150233C03LMDSXTMA1
Brand Infineon Infineon
Category MOSFETs MOSFETs
Lifecycle Status Active Active
Stock Status In Stock In Stock
Unit Price (USD) $0.76 $0.61
Drain-Source Voltage (VDS) 55 V 30 V
Continuous Drain Current (ID) 5.1 A β€”
On-Resistance (RDS(on)) max 50 mOhm at VGS=10V β€”
Power Dissipation (PD) 2.4 W β€”
Maximum Junction Temperature 175 C β€”
Configuration Dual N-Channel Dual N-channel + P-channel (1 N + 1 P)
Technology IR HEXFET Planar MOSFET OptiMOS 3 trench MOSFET
Package 8-SO (SOIC-8) PG-DSO-8-920 (SO-8 with thermal pad)
Mounting Type Surface Mount Surface Mount
Gate Threshold Voltage (VGS(th)) [DATA_NEEDED: typical VGS(th) value] β€”
Input Capacitance (Ciss) [DATA_NEEDED: Ciss typical] β€”
Output Capacitance (Coss) [DATA_NEEDED: Coss typical] β€”
Total Gate Charge (Qg) [DATA_NEEDED: Qg typical] β€”
Operating Temperature Range -55 C to +175 C -55 C to +150 C (junction)
RoHS Status Compliant Compliant
Lead-Free Yes (PBF suffix) β€”
Manufacturer β€” Infineon Technologies
Product Family β€” OptiMOS 3
N-channel Continuous Drain Current (Ta) β€” 7.6 A
N-channel Continuous Drain Current (Tc) β€” 10.2 A
P-channel Continuous Drain Current (Ta) β€” 6.6 A
P-channel Continuous Drain Current (Tc) β€” 8.8 A
Total Power Dissipation (Ta) β€” 1.4 W
Total Power Dissipation (Tc) β€” 2.5 W
Marking Code β€” 1523C03L
Channel Type β€” N-channel + P-channel enhancement mode

Datasheets & Resources

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