IRF7342TRPBF vs IRF7907TRPBF Comparison

Detailed side-by-side comparison of IRF7342TRPBF by Infineon and IRF7907TRPBF by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Specification Comparison

Parameter IRF7342TRPBF IRF7907TRPBF
Brand Infineon Infineon
Category MOSFETs MOSFETs
Lifecycle Status Active Active
Stock Status In Stock In Stock
Unit Price (USD) $0.48 $0.43
Part Number IRF7342TRPBF β€”
Manufacturer Infineon Technologies (formerly International Rectifier) β€”
Technology HEXFET Power MOSFET (Fifth Generation), P-Channel IR MOSFET (Infineon hexfet-style trench)
Configuration Dual P-Channel MOSFET Array (two independent P-FETs in one package) Dual N-Channel MOSFET Array
Drain-Source Voltage (Vds) -55 V β€”
Continuous Drain Current (Id) -3.4 A at 25 C β€”
Pulsed Drain Current (Idm) [DATA_NEEDED: pulsed drain current] β€”
Gate Threshold Voltage (Vgs(th)) -1.0 V to -3.0 V (typ -1.7 V) β€”
Drain-Source On-Resistance (RDS(on)) 0.105 ohm max at VGS = -10 V β€”
Maximum Power Dissumption (Pd) 2 W β€”
Operating Temperature Range -55 C to +150 C (Tj) -55 C to +150 C
Package 8-SOIC (SO-8), surface mount 8-SOIC (SO-8)
Mounting Type Surface Mount Surface Mount
Packaging Tape and Reel (TR) Tape & Reel (TR)
Lead-Free / RoHS Yes (PBF suffix indicates lead-free, RoHS compliant) β€”
Channel Type P-Channel (enhancement mode) β€”
Number of Channels 2 (dual array) β€”
Drain-Source Voltage (VDS) Max β€” 30 V
Continuous Drain Current (ID) Max β€” 9.1 A per channel at 25 C
Pulsed Drain Current (IDM) Max β€” 11 A
On-Resistance (RDS(on)) Max β€” 11.8 mOhm at VGS = 10 V
Gate-Source Threshold Voltage (VGS(th)) β€” 1.35 V (typ)
Total Power Dissipation (PD) Max β€” 2 W
Lead-Free Status β€” Yes (PBF suffix)
RoHS Status β€” Compliant
Channel Polarity β€” N-Channel (both)

Datasheets & Resources

Browse All Products Create BOM Request Quote