IRF7416TRPBF vs IRFH5020TRPBF Comparison
Detailed side-by-side comparison of IRF7416TRPBF by Infineon and IRFH5020TRPBF by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Infineon
IRFH5020TRPBF
IRFH5020TRPBF - 200V 5.1A N-Channel HEXFET MOSFET | Infineon
IRFH5020TRPBF β ActiveSpecification Comparison
| Parameter | IRF7416TRPBF | IRFH5020TRPBF |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $0.32 | $0.36 |
| FET Type | P-Channel | MOSFET N-Channel, Metal Oxide |
| Technology | HEXFET (IR MOSFET) | β |
| Drain-to-Source Voltage (VDS) | -30 V | 200 V |
| Continuous Drain Current (ID) at TA=25C | -10 A | β |
| Pulsed Drain Current (IDM) | -50 A | 63 A |
| Static Drain-to-Source On-Resistance (RDS(on)) max | 20 mOhm at VGS = -10 V | β |
| Gate-to-Source Voltage (VGS) max | [DATA_NEEDED: VGS max rating] | Β±20 V |
| Gate Threshold Voltage (VGS(th)) | -1 V to -3 V | β |
| Total Gate Charge (Qg) | 61 nC | β |
| Power Dissipation (PD) max at TA=25C | 2.5 W | β |
| Thermal Resistance, Junction-to-Ambient (RthJA) | 50 C/W | β |
| Operating Junction Temperature Range | -55 C to +150 C | β |
| Package | 8-SO (SOIC-8) | β |
| Mounting Type | Surface Mount | Surface Mount |
| RoHS Status | Compliant | β |
| Lead-Free | Yes | β |
| MSL Level | 1 (unlimited) | 1 (per industry standard for PQFN-8) |
| Manufacturer | β | Infineon Technologies (formerly International Rectifier) |
| Product Family | β | HEXFET Power MOSFET |
| Configuration | β | Single with built-in diode |
| Continuous Drain Current (ID) at TA=25Β°C | β | 5.1 A |
| RDS(on) max at VGS=10V | β | 55 mΞ© |
| Gate Charge (Qg) typ | β | 11 nC |
| Power Dissipation (TA=25Β°C) | β | 3.6 W |
| Power Dissipation (TC=25Β°C) | β | 8.3 W |
| Thermal Resistance, Junction-to-PCB (RthJB) | β | 0.8 Β°C/W |
| Package Type | β | 8-PQFN (5x6 mm) SuperSO8 |
| Profile Height | β | β€ 0.9 mm |
| Operating Temperature Range | β | -55 Β°C to +150 Β°C (TJ max) |
| Qualification Standard | β | JEDEC (Normal level) |
| Gate Drive Optimization | β | 10 V VGS |
| RoHS Compliance | β | Compliant (Pb-free suffix PBF) |