IRF7469TRPBF vs IRFH5020TRPBF Comparison
Detailed side-by-side comparison of IRF7469TRPBF by Infineon and IRFH5020TRPBF by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Infineon
IRFH5020TRPBF
IRFH5020TRPBF - 200V 5.1A N-Channel HEXFET MOSFET | Infineon
IRFH5020TRPBF β ActiveSpecification Comparison
| Parameter | IRF7469TRPBF | IRFH5020TRPBF |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $0.37 | $0.36 |
| FET Type | N-Channel | MOSFET N-Channel, Metal Oxide |
| Technology | IR MOSFETβ’ (HEXFET) | β |
| Drain-Source Voltage (Vdss) | 40 V | β |
| Continuous Drain Current (Id) at TA=25Β°C | 9 A | β |
| Rds(on) Max at Vgs=10V | 17 mΞ© | β |
| Total Gate Charge (Qg) | 15 nC | β |
| Gate-Source Voltage (Vgs) Max | Β±20 V | β |
| Power Dissipation (Pd) at TA=25Β°C | 2.5 W | β |
| Operating Temperature Range | -55Β°C to +150Β°C (Tj) | -55 Β°C to +150 Β°C (TJ max) |
| Package | 8-SO (SOIC-8) | β |
| Mounting Type | Surface Mount | Surface Mount |
| MSL Level | 1 (unlimited) | 1 (per industry standard for PQFN-8) |
| RoHS Status | Compliant | β |
| Lead-Free | Yes | β |
| Halogen-Free | Yes | β |
| Channel Mode | Enhancement | β |
| Input Capacitance (Ciss) | [DATA_NEEDED: Ciss] | β |
| Output Capacitance (Coss) | [DATA_NEEDED: Coss] | β |
| Reverse Recovery Charge (Qrr) | [DATA_NEEDED: Qrr] | β |
| Manufacturer | β | Infineon Technologies (formerly International Rectifier) |
| Product Family | β | HEXFET Power MOSFET |
| Configuration | β | Single with built-in diode |
| Drain-to-Source Voltage (VDS) | β | 200 V |
| Continuous Drain Current (ID) at TA=25Β°C | β | 5.1 A |
| Pulsed Drain Current (IDM) | β | 63 A |
| Gate-to-Source Voltage (VGS) max | β | Β±20 V |
| RDS(on) max at VGS=10V | β | 55 mΞ© |
| Gate Charge (Qg) typ | β | 11 nC |
| Power Dissipation (TA=25Β°C) | β | 3.6 W |
| Power Dissipation (TC=25Β°C) | β | 8.3 W |
| Thermal Resistance, Junction-to-PCB (RthJB) | β | 0.8 Β°C/W |
| Package Type | β | 8-PQFN (5x6 mm) SuperSO8 |
| Profile Height | β | β€ 0.9 mm |
| Qualification Standard | β | JEDEC (Normal level) |
| Gate Drive Optimization | β | 10 V VGS |
| RoHS Compliance | β | Compliant (Pb-free suffix PBF) |