IRF7469TRPBF vs IRFH7084TRPBF Comparison

Detailed side-by-side comparison of IRF7469TRPBF by Infineon and IRFH7084TRPBF by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Infineon
IRFH7084TRPBF

IRFH7084TRPBF - 40V 100A N-Ch StrongIRFET PQFN | Infineon

IRFH7084TRPBF ✓ Active

Specification Comparison

Parameter IRF7469TRPBF IRFH7084TRPBF
Brand Infineon Infineon
Category MOSFETs MOSFETs
Lifecycle Status Active Active
Stock Status In Stock In Stock
Unit Price (USD) $0.37 $0.45
FET Type N-Channel N-Channel
Technology IR MOSFET™ (HEXFET) StrongIRFET™ (trench MOSFET)
Drain-Source Voltage (Vdss) 40 V
Continuous Drain Current (Id) at TA=25°C 9 A
Rds(on) Max at Vgs=10V 17 mΩ
Total Gate Charge (Qg) 15 nC
Gate-Source Voltage (Vgs) Max ±20 V
Power Dissipation (Pd) at TA=25°C 2.5 W
Operating Temperature Range -55°C to +150°C (Tj) -55°C to +175°C (TJ)
Package 8-SO (SOIC-8) 8-PQFN 5x6 mm (SuperSO8)
Mounting Type Surface Mount Surface Mount
MSL Level 1 (unlimited) 1
RoHS Status Compliant Compliant
Lead-Free Yes
Halogen-Free Yes
Channel Mode Enhancement
Input Capacitance (Ciss) [DATA_NEEDED: Ciss]
Output Capacitance (Coss) [DATA_NEEDED: Coss]
Reverse Recovery Charge (Qrr) [DATA_NEEDED: Qrr]
Drain-Source Voltage (VDS) 40 V
Continuous Drain Current (ID, Tc=25°C, package-limited) 100 A
Silicon-Limited Drain Current 265 A
Power Dissipation (PD, Tc=25°C) 156 W
On-Resistance RDS(on) max @ VGS=10V 1.25 mΩ
On-Resistance RDS(on) typ @ VGS=10V 0.95 mΩ
Gate-Source Voltage (VGS) max ±20 V
Gate Threshold Voltage VGS(th) typ 1.7 V to 2.7 V
Input Capacitance (Ciss) max @ 25V 6560 pF
Halogen Free Compliant
RthJC max 0.96 °C/W (per datasheet)

Datasheets & Resources

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