IRF7769L1TRPBF vs IRF7779L2TRPBF Comparison
Detailed side-by-side comparison of IRF7769L1TRPBF by Infineon and IRF7779L2TRPBF by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Infineon
IRF7769L1TRPBF
IRF7769L1TRPBF - 100V N-Channel HEXFET MOSFET | Infineon
IRF7769L1TRPBF β ActiveInfineon
IRF7779L2TRPBF
IRF7779L2TRPBF - 150V 67A HEXFET N-Channel MOSFET | Infineon
IRF7779L2TRPBF β ActiveSpecification Comparison
| Parameter | IRF7769L1TRPBF | IRF7779L2TRPBF |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $1.72 | $2.90 |
| Polarity | N-Channel | β |
| VDS (Drain-Source Voltage) | 100 V | β |
| VGS (Gate-Source Voltage) | Β±20 V | β |
| Continuous Drain Current (TA=25C) | 20 A | β |
| Continuous Drain Current (TC=25C) | 124 A | β |
| Pulsed Drain Current | 142 A | β |
| Power Dissipation (TA=25C) | 3.3 W | β |
| Power Dissipation (TC=25C) | 125 W | β |
| RDS(on) max at VGS=10V | 3.5 mOhm | 11 mOhm |
| RDS(on) max at VGS=4.5V | [DATA_NEEDED: RDS(on) at 4.5V] | β |
| Gate Threshold Voltage VGS(th) | [DATA_NEEDED: VGS(th)] | β |
| Total Gate Charge Qg | 200 nC | β |
| Technology | HEXFET (IR MOSFET) | HEXFET (IR MOSFET) |
| Package | DirectFET Isometric L8 | DirectFET Isometric L8 |
| Package Profile | 0.7 mm | β |
| Mounting Type | Surface Mount | Surface Mount |
| Operating Temperature Range | -55C to +150C (TJ) | β |
| MSL Level | 1 | β |
| Lead-Free Reflow | 260C qualified | β |
| Halogen-Free | Yes | β |
| RoHS Compliance | Compliant | β |
| Drain-to-Source Voltage (VDS) | β | 150 V |
| Continuous Drain Current (ID) at Tc=25C | β | 67 A |
| Pulsed Drain Current (IDM) | β | [DATA_NEEDED: pulsed drain current] |
| RDS(on) typical at VGS=10V | β | 7.7 mOhm |
| Gate-to-Source Voltage (VGS) max | β | 20 V |
| Total Gate Charge (Qg) | β | 11 nC |
| Gate Threshold Voltage (VGS(th)) | β | [DATA_NEEDED: VGS(th)] |
| Power Dissipation (PD) at Tc=25C | β | 125 W |
| Power Dissipation (PD) at TA=25C | β | 3.3 W |
| Operating Junction Temperature | β | -55C to +175C |
| Profile Height | β | 0.7 mm |
| RoHS Status | β | Compliant |