IRF7769L1TRPBF vs IRFB4110PBF Comparison
Detailed side-by-side comparison of IRF7769L1TRPBF by Infineon and IRFB4110PBF by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Infineon
IRF7769L1TRPBF
IRF7769L1TRPBF - 100V N-Channel HEXFET MOSFET | Infineon
IRF7769L1TRPBF β Active
Specification Comparison
| Parameter | IRF7769L1TRPBF | IRFB4110PBF |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $1.72 | $1.55 |
| Polarity | N-Channel | β |
| VDS (Drain-Source Voltage) | 100 V | β |
| VGS (Gate-Source Voltage) | Β±20 V | β |
| Continuous Drain Current (TA=25C) | 20 A | β |
| Continuous Drain Current (TC=25C) | 124 A | β |
| Pulsed Drain Current | 142 A | β |
| Power Dissipation (TA=25C) | 3.3 W | β |
| Power Dissipation (TC=25C) | 125 W | β |
| RDS(on) max at VGS=10V | 3.5 mOhm | β |
| RDS(on) max at VGS=4.5V | [DATA_NEEDED: RDS(on) at 4.5V] | β |
| Gate Threshold Voltage VGS(th) | [DATA_NEEDED: VGS(th)] | β |
| Total Gate Charge Qg | 200 nC | β |
| Technology | HEXFET (IR MOSFET) | HEXFET (planar DMOS) |
| Package | DirectFET Isometric L8 | TO-220AB (through-hole) |
| Package Profile | 0.7 mm | β |
| Mounting Type | Surface Mount | Through Hole |
| Operating Temperature Range | -55C to +150C (TJ) | β |
| MSL Level | 1 | β |
| Lead-Free Reflow | 260C qualified | β |
| Halogen-Free | Yes | β |
| RoHS Compliance | Compliant | β |
| Transistor Type | β | N-Channel MOSFET |
| Drain-Source Voltage (VDS) | β | 100 V |
| Continuous Drain Current (ID) at TC=25Β°C | β | 120 A (bond-wire limited) |
| Pulsed Drain Current (IDM) | β | [DATA_NEEDED: pulsed drain current] |
| Gate-Source Voltage (VGS) max | β | Β±20 V |
| Gate Threshold Voltage (VGS(th)) | β | [DATA_NEEDED: VGS(th) typical/min/max] |
| On-Resistance RDS(on) max at VGS=10V | β | 4.5 mΞ© |
| On-Resistance RDS(on) typ at VGS=10V | β | 3.7 mΞ© |
| Power Dissipation (PD) at TC=25Β°C | β | 370 W |
| Operating Junction Temperature | β | -55 Β°C to +175 Β°C |
| RoHS Status | β | Compliant (Pb-free suffix) |
| Lead-Free | β | Yes (PBF suffix denotes Pb-free) |