IRF7815TRPBF vs IRF7854TRPBF Comparison

Detailed side-by-side comparison of IRF7815TRPBF by Infineon and IRF7854TRPBF by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Infineon
IRF7815TRPBF IRF7815TRPBF - 150V N-Ch HEXFET MOSFET 5.1A | Infineon

IRF7815TRPBF - 150V N-Ch HEXFET MOSFET 5.1A | Infineon

IRF7815TRPBF βœ“ Active

Specification Comparison

Parameter IRF7815TRPBF IRF7854TRPBF
Brand Infineon Infineon
Category MOSFETs MOSFETs
Lifecycle Status Active Active
Stock Status In Stock In Stock
Unit Price (USD) $0.36 $0.48
FET Type N-Channel MOSFET N-Channel
Technology IR MOSFET (HEXFET) HEXFET (planar N-channel)
Drain-to-Source Voltage (Vdss) 150 V β€”
Continuous Drain Current (Id) at Ta=25C 5.1 A β€”
Rds(on) Max at Vgs=10V 43 mOhm β€”
Gate Threshold Voltage (Vgs(th)) Typ 3.0 V β€”
Total Gate Charge (Qg) Typ 25 nC β€”
Maximum Power Dissipation (Ta=25C) 2.5 W β€”
Operating Temperature Range -55C to +150C (Tj) -55Β°C to +150Β°C (TJ)
Package SO-8 (8-SO) SO-8
Mounting Type Surface Mount Surface Mount
MSL Level 1 β€”
RoHS Status Compliant (Pb-free) β€”
Lead-Free Yes β€”
Configuration Single β€”
Avalanche Rated Yes β€”
Drain-Source Voltage (VDS) β€” 80 V
Continuous Drain Current (ID) at Ta=25Β°C β€” 10 A
Power Dissipation (PD) at Ta=25Β°C β€” 2.5 W
On-Resistance RDS(on) max at VGS=10V β€” 13.4 mΞ©
Gate-Source Threshold Voltage VGS(th) max β€” 4.9 V
Total Gate Charge Qg β€” 27 nC
Lead-Free / RoHS β€” Yes (PBF suffix, lead-free)
Qualification β€” JEDEC industrial, Normal level
Solder Process β€” Reflow and wave-solderable
Gate Drive Voltage (recommended) β€” 10 V

Datasheets & Resources

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