IRF7815TRPBF vs IRFR3411TRPBF Comparison
Detailed side-by-side comparison of IRF7815TRPBF by Infineon and IRFR3411TRPBF by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Specification Comparison
| Parameter | IRF7815TRPBF | IRFR3411TRPBF |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $0.36 | $0.55 |
| FET Type | N-Channel MOSFET | MOSFET (Metal Oxide) |
| Technology | IR MOSFET (HEXFET) | HEXFET Power MOSFET (IR) |
| Drain-to-Source Voltage (Vdss) | 150 V | β |
| Continuous Drain Current (Id) at Ta=25C | 5.1 A | β |
| Rds(on) Max at Vgs=10V | 43 mOhm | β |
| Gate Threshold Voltage (Vgs(th)) Typ | 3.0 V | β |
| Total Gate Charge (Qg) Typ | 25 nC | β |
| Maximum Power Dissipation (Ta=25C) | 2.5 W | β |
| Operating Temperature Range | -55C to +150C (Tj) | -55 C to +175 C |
| Package | SO-8 (8-SO) | TO-252AA (DPAK) |
| Mounting Type | Surface Mount | Surface Mount |
| MSL Level | 1 | β |
| RoHS Status | Compliant (Pb-free) | β |
| Lead-Free | Yes | β |
| Configuration | Single | β |
| Avalanche Rated | Yes | Yes (fully avalanche rated) |
| Polarity | β | N-Channel |
| V(BR)DSS (Drain-Source Breakdown Voltage) | β | 100 V |
| RDS(on) max @ VGS=10V | β | 44 mOhm |
| Continuous Drain Current (Id) @ Tc | β | 32 A |
| Pulsed Drain Current (Idm) | β | [DATA_NEEDED: pulsed drain current] |
| Power Dissipation (Pd) @ Tc | β | 130 W |
| Gate Charge (Qg) | β | 48 nC |
| Operating Mode | β | Enhancement |
| Maximum Junction Temperature | β | 175 C |
| Number of Pins | β | 3 |
| dv/dt Rating | β | Dynamic dv/dt rated |
| Lead-Free / RoHS | β | Yes (Lead-free, PBF suffix) |