IRF7832TRPBF vs BSC094N06LS5ATMA1 Comparison
Detailed side-by-side comparison of IRF7832TRPBF by Infineon and BSC094N06LS5ATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Infineon
BSC094N06LS5ATMA1 - 60V 9.4mΞ© 47A N-Channel OptiMOS 5 | Infineon
BSC094N06LS5ATMA1 β ActiveSpecification Comparison
| Parameter | IRF7832TRPBF | BSC094N06LS5ATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $0.92 | $0.38 |
| Manufacturer | Infineon Technologies (formerly International Rectifier) | Infineon Technologies |
| Part Number | IRF7832TRPBF | BSC094N06LS5ATMA1 |
| FET Type | N-Channel | N-Channel |
| Technology | HEXFET (trench MOSFET) | OptiMOSβ’ 5 (logic-level) |
| Drain-Source Voltage (VDS) | 30 V | β |
| Continuous Drain Current (ID) at TA=25C | 20 A | β |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: pulsed drain current] | [DATA_NEEDED: IDM] |
| On-Resistance RDS(on) max at VGS=10V | 4.0 mOhm | β |
| Gate-Source Voltage (VGS) max | +/- 20 V | β |
| Gate Threshold Voltage (VGS(th)) typical | 1.0 V to 2.5 V | β |
| Total Gate Charge (Qg) typical | 34 nC | β |
| Power Dissipation (PD) at TA=25C | 2.5 W | β |
| Operating Temperature Range | -55 C to +150 C (TJ) | β |
| Package | 8-SO (SOIC-8) | PG-TDSON-8-6 (SuperSO8 5x6) |
| Mounting Type | Surface Mount | Surface Mount |
| MSL Level | 1 (per JEDEC J-STD-020) | [DATA_NEEDED: MSL level] |
| RoHS Status | Compliant | Compliant |
| Lead-Free | Yes | β |
| Drain-to-Source Voltage (VDS) | β | 60 V |
| Continuous Drain Current (ID) at TC=25Β°C | β | 47 A |
| Continuous Drain Current (ID) at TC=100Β°C | β | [DATA_NEEDED: ID at TC=100C] |
| RDS(on) max at VGS=10 V | β | 9.4 mΞ© |
| RDS(on) max at VGS=4.5 V | β | [DATA_NEEDED: RDS(on) at VGS=4.5V] |
| Gate Threshold Voltage (VGS(th)) | β | [DATA_NEEDED: VGS(th) typ/range] |
| Total Gate Charge (Qg) | β | [DATA_NEEDED: Qg typ] |
| Power Dissipation (PD) at TC=25Β°C | β | 36 W |
| Operating Junction Temperature | β | -55 Β°C to +150 Β°C |