IRF7832TRPBF vs IRF7309TRPBF Comparison

Detailed side-by-side comparison of IRF7832TRPBF by Infineon and IRF7309TRPBF by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Specification Comparison

Parameter IRF7832TRPBF IRF7309TRPBF
Brand Infineon Infineon
Category MOSFETs MOSFETs
Lifecycle Status Active Active
Stock Status In Stock In Stock
Unit Price (USD) $0.92 $0.35
Manufacturer Infineon Technologies (formerly International Rectifier) β€”
Part Number IRF7832TRPBF β€”
FET Type N-Channel β€”
Technology HEXFET (trench MOSFET) IR HEXFET Generation V
Drain-Source Voltage (VDS) 30 V 30 V
Continuous Drain Current (ID) at TA=25C 20 A β€”
Pulsed Drain Current (IDM) [DATA_NEEDED: pulsed drain current] β€”
On-Resistance RDS(on) max at VGS=10V 4.0 mOhm β€”
Gate-Source Voltage (VGS) max +/- 20 V β€”
Gate Threshold Voltage (VGS(th)) typical 1.0 V to 2.5 V β€”
Total Gate Charge (Qg) typical 34 nC β€”
Power Dissipation (PD) at TA=25C 2.5 W β€”
Operating Temperature Range -55 C to +150 C (TJ) -55C to +150C (TJ)
Package 8-SO (SOIC-8) 8-SO (SOIC-8)
Mounting Type Surface Mount Surface Mount
MSL Level 1 (per JEDEC J-STD-020) MSL-1 (unlimited floor life per JEDEC J-STD-020)
RoHS Status Compliant Compliant
Lead-Free Yes β€”
Configuration β€” Dual N-Channel + P-Channel (Complementary)
Polarity β€” N+P
Continuous Drain Current (N-channel, TA=25C) β€” 4 A
Continuous Drain Current (P-channel, TA=25C) β€” 3 A
On-Resistance (N-channel, max) β€” 50 mOhm
On-Resistance (P-channel, max) β€” [DATA_NEEDED: RDS(on) P-channel value]
Power Dissipation (TA=25C) β€” 1.4 W
Gate Threshold Voltage (VGS(th)) β€” [DATA_NEEDED: typical VGS(th) value]
Lead-Free Status β€” Yes (TRPBF suffix = Pb-free)
Packaging β€” Tape & Reel

Datasheets & Resources

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