IRF7832TRPBF vs IRF8736PBF Comparison

Detailed side-by-side comparison of IRF7832TRPBF by Infineon and IRF8736PBF by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Specification Comparison

Parameter IRF7832TRPBF IRF8736PBF
Brand Infineon Infineon
Category MOSFETs MOSFETs
Lifecycle Status Active Active
Stock Status In Stock In Stock
Unit Price (USD) $0.92 $0.45
Manufacturer Infineon Technologies (formerly International Rectifier) β€”
Part Number IRF7832TRPBF β€”
FET Type N-Channel β€”
Technology HEXFET (trench MOSFET) β€”
Drain-Source Voltage (VDS) 30 V 30 V
Continuous Drain Current (ID) at TA=25C 20 A β€”
Pulsed Drain Current (IDM) [DATA_NEEDED: pulsed drain current] [DATA_NEEDED: pulsed drain current]
On-Resistance RDS(on) max at VGS=10V 4.0 mOhm β€”
Gate-Source Voltage (VGS) max +/- 20 V β€”
Gate Threshold Voltage (VGS(th)) typical 1.0 V to 2.5 V β€”
Total Gate Charge (Qg) typical 34 nC β€”
Power Dissipation (PD) at TA=25C 2.5 W β€”
Operating Temperature Range -55 C to +150 C (TJ) -55Β°C to +150Β°C (junction)
Package 8-SO (SOIC-8) SO-8 (8-SO)
Mounting Type Surface Mount Surface Mount
MSL Level 1 (per JEDEC J-STD-020) 1 (Unlimited)
RoHS Status Compliant β€”
Lead-Free Yes β€”
Polarity / Channel Type β€” N-Channel
Continuous Drain Current (ID) at TA=25Β°C β€” 18 A
Continuous Drain Current (ID) at TA=70Β°C β€” [DATA_NEEDED: ID at TA=70Β°C]
On-Resistance RDS(on) at VGS=10V β€” 4.8 mΞ©
On-Resistance RDS(on) at VGS=4.5V β€” 6.0 mΞ© (typical)
Gate-Source Threshold Voltage VGS(th) β€” Logic-level (optimized for 5 V drive)
Total Gate Charge Qg β€” 17 nC (typical)
Maximum Power Dissipation at TA=25Β°C β€” 2.5 W
RoHS / Lead-Free β€” Lead-Free, RoHS3 Compliant
Qualification Standard β€” JEDEC
Avalanche Rated β€” Yes (fully characterized avalanche voltage and current)

Datasheets & Resources

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